IRFR1018ETRPBF vs IRFR5305TRPBF 比較

詳細並排比較 IRFR1018ETRPBF 由 Infineon 與 IRFR5305TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR1018ETRPBF IRFR1018ETRPBF - 60V 79A 8.4mΩ N-Channel MOSFET | Infineon

IRFR1018ETRPBF - 60V 79A 8.4mΩ N-Channel MOSFET | Infineon

IRFR1018ETRPBF ✓ 啟用中
Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 啟用中

規格比較

參數 IRFR1018ETRPBF IRFR5305TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Drain-to-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) 79 A (Tc) —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Rds(on) Max @ Vgs=10V 8.4 mΩ —
Rds(on) Max @ Vgs=4.5V [DATA_NEEDED: Rds(on) at 4.5V] —
Gate Threshold Voltage (Vgs(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 46 nC —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Maximum Power Dissipation (Pd) 110 W (Tc) —
工作溫度範圍 -55 °C to +175 °C -55 C to +175 C
封裝 TO-252AA (D-Pak) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
Technology HEXFET HEXFET (IR MOSFET)
RoHS 狀態 Compliant Compliant (Pb-free PBF suffix)
Lead-Free Yes —
MSL 等級 1 1
Avalanche Rated Yes —
Polarity — P-Channel
Drain-Source Voltage (VDS) Max — -55 V
Continuous Drain Current (ID) at TC=25C — 31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V — 65 mOhm
Gate-Source Threshold Voltage (VGS(th)) — -2 V to -4 V
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25C — 110 W
Single-Pulse Avalanche Energy (EAS) — 270 mJ
Lead-Free Finish — Yes (PBF suffix)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價