IRFR5305TRPBF vs IRFR1018ETRPBF 比較

詳細並排比較 IRFR5305TRPBF 由 Infineon 與 IRFR1018ETRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 啟用中
Infineon
IRFR1018ETRPBF IRFR1018ETRPBF - 60V 79A 8.4mΩ N-Channel MOSFET | Infineon

IRFR1018ETRPBF - 60V 79A 8.4mΩ N-Channel MOSFET | Infineon

IRFR1018ETRPBF ✓ 啟用中

規格比較

參數 IRFR5305TRPBF IRFR1018ETRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
工作溫度範圍 -55 C to +175 C -55 °C to +175 °C
封裝 TO-252AA (DPAK) TO-252AA (D-Pak)
安裝類型 Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) HEXFET
MSL 等級 1 1
RoHS 狀態 Compliant (Pb-free PBF suffix) Compliant
Lead-Free Finish Yes (PBF suffix) —
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) — 79 A (Tc)
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Rds(on) Max @ Vgs=10V — 8.4 mΩ
Rds(on) Max @ Vgs=4.5V — [DATA_NEEDED: Rds(on) at 4.5V]
Gate Threshold Voltage (Vgs(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 46 nC
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Maximum Power Dissipation (Pd) — 110 W (Tc)
Lead-Free — Yes
Avalanche Rated — Yes

資料表與資源

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