IRS2005MTRPBF vs 1ED020I12B2XUMA1 比較

詳細並排比較 IRS2005MTRPBF 由 Infineon 與 1ED020I12B2XUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2005MTRPBF IRS2005MTRPBF - 200V Half-Bridge Gate Driver | Infineon

IRS2005MTRPBF - 200V Half-Bridge Gate Driver | Infineon

IRS2005MTRPBF ✓ 啟用中

規格比較

參數 IRS2005MTRPBF 1ED020I12B2XUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Number of Drivers 2 —
Maximum Offset Voltage 200 V —
Input Logic Non-Inverting —
Source Current (Typical) 0.29 A —
Sink Current (Typical) 0.6 A —
Supply Voltage VCC [DATA_NEEDED: VCC range] —
VCC UVLO Threshold Yes (per datasheet) —
VBS UVLO Threshold Yes (per datasheet) —
Bootstrap Driver Internal (integrated bootstrap diode) —
Propagation Delay [DATA_NEEDED: t_on/t_off] —
Package Type 14-MLPQ (4x4 mm) with Exposed Pad —
安裝類型 Surface Mount Surface Mount
工作溫度 -40C to +125C (per datasheet) -40 °C to +125 °C
MSL 等級 2 MSL-3 (per JEDEC J-STD-020)
RoHS 狀態 Compliant —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Technology — Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) — 4500 Vrms
Number of Channels — 1
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
封裝 — PG-DSO-16-15 (300 mil wide-body DSO-16)
Creepage Distance — 8 mm
Compliance — RoHS compliant

資料表與資源

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