IRS2104STRPBF vs AUIRS21811STR 比較

詳細並排比較 IRS2104STRPBF 由 Infineon 與 AUIRS21811STR 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2104STRPBF IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS2104STRPBF ✓ 啟用中

規格比較

參數 IRS2104STRPBF AUIRS21811STR
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
拓撲 Half-Bridge (High-Side + Low-Side) —
Number of Channels 2 (HS + LS, dependent) —
High-Side Offset Voltage (VS) -5 V to +600 V —
Logic Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 150 ns —
Rise Time (typ.) 35 ns —
Fall Time (typ.) 70 ns —
Quiescent Current (typ.) 150 uA —
Undervoltage Protection Yes (VCC and VBS UVLO) —
Shutdown Pin Yes (SD, active-low per typical usage) —
Logic Input Compatibility Standard CMOS / LSTTL —
工作接面溫度 -40C to +150C —
封裝 8-Lead SOIC (SOIC-8) 8-SOIC (3.90 mm width)
安裝類型 Surface Mount Surface Mount
MSL 等級 2 (1 year floor life per datasheet) —
Qualification Level Industrial —
RoHS 狀態 Compliant (PbF suffix) Compliant
Configuration — High and Low Side, Independent
Driver Type — Half-Bridge Gate Driver IC, Non-Inverting
Number of Drivers — 2
Supply Voltage (VCC) — 10 V to 20 V
Bootstrap High-Side Voltage (Max) — 600 V
Peak Source Current — 1.9 A
Peak Sink Current — 2.3 A
Rise Time (Typ, 1 nF load) — 60 ns
Fall Time (Typ, 1 nF load) — 35 ns
Propagation Delay (Typ) — 160 ns
Delay Matching (HS/LS) — [DATA_NEEDED: delay matching t/s]
Input Logic Levels — VIL 0.8 V, VIH 2.5 V (CMOS/TTL compatible)
Input Type — Non-Inverting
Undervoltage Lockout (UVLO) — Yes, on VCC and VBS
工作溫度範圍 — -40 C to +125 C
濕度敏感等級 (MSL) — MSL3
Automotive Qualification — AEC-Q100

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