IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon
MPN： IRS2104STRPBF ✓ 啟用中IRS2104STRPBF 概覽
A half-bridge gate driver is a power-management IC that translates low-voltage PWM control signals into the high-current, floating high-side drive required to switch the upper transistor in a half-bridge or full-bridge power stage. It sits in the broader hierarchy of gate driver IC -> driver -> power management IC -> semiconductor, and is the critical interface between an MCU/controller and the high-voltage switching devices (MOSFETs or IGBTs) used in motor drives, power supplies, and lighting inverters.
Key features of the IRS2104STRPBF include typical 150 ns propagation delay, 35 ns rise time, 70 ns fall time, 150 uA quiescent current, and integrated undervoltage protection (UVLO) for both the logic and bootstrap supplies. The high-side channel is built on a proprietary floating bootstrap structure that tolerates VS offsets from -5 V to +600 V, allowing direct drive of the high-side switch in a 400 V or 600 V DC bus without an auxiliary supply.
The monolithic HVIC process enables the high-side level-shifter, the low-side driver, the UVLO blocks, and the input logic to coexist on a single die, reducing BOM count and improving reliability versus discrete bootstrap drive circuits. The 8-pin SOIC footprint is industry-standard for half-bridge drivers, simplifying PCB layout and enabling second-source flexibility.
Typical applications include low-power motor drives for fans, pumps and small appliances; SMPS half-bridge and full-bridge converters; fluorescent and HID lighting ballasts; Class D audio amplifiers; and any 110/220 VAC-line-rectified half-bridge topology where a single PWM input must switch both the high-side and low-side MOSFETs from a compact 8-pin package.
When designing with the IRS2104STRPBF, choose a bootstrap diode with fast recovery and a Vbr of at least 600 V, and a 0.1 uF to 1 uF ceramic bootstrap capacitor sized to refresh the high-side supply within the minimum pulse width. Maintain VS below 600 V and respect the SD pin logic timing to avoid unwanted shutdowns during load transients.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, helping engineers select and source the IRS2104STRPBF for new and existing designs.
直接替換替代品，適用於 IRS2104STRPBF — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IRS2104STRPBF （相同外形與佔位） — 差異在於 Package, Logic Input Compatibility, RoHS Status, Configuration, MSL Level.
IRS2104SPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IRS2110SPBF
✅ 直接替換聯絡詢價
查看資料表 →IRS2124SPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IRS2186SPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IRS2302STRPBF
✅ 直接替換聯絡詢價
查看資料表 →TPG2104
✅ 直接替換📋 參考替代品（不在目錄中）
IRS2104STRPBF 最大額定值與電氣特性
| Product Type | Half-Bridge Gate Driver IC |
| 拓撲 | Half-Bridge (High-Side + Low-Side) |
| Number of Channels | 2 (HS + LS, dependent) |
| High-Side Offset Voltage (VS) | -5 V to +600 V |
| Logic Supply Voltage (VCC) | 10 V to 20 V |
| Source Current (typ.) | 0.29 A |
| Sink Current (typ.) | 0.6 A |
| Propagation Delay (typ.) | 150 ns |
| Rise Time (typ.) | 35 ns |
| Fall Time (typ.) | 70 ns |
| Quiescent Current (typ.) | 150 uA |
| Undervoltage Protection | Yes (VCC and VBS UVLO) |
| Shutdown Pin | Yes (SD, active-low per typical usage) |
| Logic Input Compatibility | Standard CMOS / LSTTL |
| 工作接面溫度 | -40C to +150C |
| 封裝 | 8-Lead SOIC (SOIC-8) |
| 安裝類型 | Surface Mount |
| MSL 等級 | 2 (1 year floor life per datasheet) |
| Qualification Level | Industrial |
| RoHS 狀態 | Compliant (PbF suffix) |
IRS2104STRPBF 腳位配置
| 腳位 1 | VCC — Logic and low-side supply voltage (10 V to 20 V) |
| 腳位 2 | IN — Logic input for high-side and low-side gate drive (CMOS/TTL compatible) |
| 腳位 3 | SD — Shutdown input (logic-low disables both outputs per typical application) |
| 腳位 4 | COM — Low-side return and IC ground reference |
| 腳位 5 | LO — Low-side gate drive output (0.29 A source / 0.6 A sink) |
| 腳位 6 | VS — High-side floating supply return (switch node, -5 V to +600 V) |
| 腳位 7 | HO — High-side gate drive output (0.29 A source / 0.6 A sink) |
| 腳位 8 | VB — High-side floating supply (bootstrap rail referenced to VS) |
典型應用
IRS2104STRPBF 適用於 6 應用s: Low-Power AC Motor Drive (Fans & Pumps), Switch-Mode Power Supply (SMPS) Half-Bridge, Fluorescent and HID Lighting Ballasts, Class D Audio Amplifier Output Stage, Solar Micro-Inverter / Optimizer, Induction Heating Cooktop Resonant Inverter.
Low-Power AC Motor Drive (Fans & Pumps)
The IRS2104STRPBF drives a 600 V half-bridge switching stage that energizes the windings of small single-phase or three-phase AC induction and BLDC motors used in fans, pumps, and small appliances. Its 0.29 A source / 0.6 A sink drive currents comfortably switch 600 V MOSFETs with Qg up to ~30 nC at 20-50 kHz PWM, while the integrated UVLO prevents hazardous half-bridge shoot-through if the bootstrap supply droops during low-duty-cycle startup. The shutdown pin (SD) lets a microcontroller gate the motor drive off within 200 ns in response to overcurrent or over-temperature faults. Compared to discrete bootstrap circuits, the IRS2104STRPBF saves four to six components and reduces PCB area by roughly 40 percent in a typical 200 W appliance drive.
推薦
Switch-Mode Power Supply (SMPS) Half-Bridge
In 110/220 VAC-line-rectified half-bridge or full-bridge SMPS converters up to ~300 W, the IRS2104STRPBF provides the level-shifted high-side drive and low-side drive from a single logic input, eliminating the need for an auxiliary high-side supply. Its 600 V VS rating covers a 400 V PFC output bus with 50 percent safety margin, and 35 ns rise / 70 ns fall times minimize switching losses in 100 kHz hard-switched stages. The shutdown pin interfaces directly to a PWM controller fault output, instantly disabling both gates on OCP or OVP events. Compared to using two low-side drivers and a discrete bootstrap network, the IRS2104STRPBF reduces gate-drive BOM by 60 percent and improves noise immunity through integrated HVIC isolation.
推薦
Fluorescent and HID Lighting Ballasts
The IRS2104STRPBF is widely used in electronic ballasts for fluorescent tubes, compact fluorescent lamps (CFL), and high-intensity discharge (HID) lamps, where it switches a resonant half-bridge LC network at 30-100 kHz. Its 600 V rating handles the rectified 220 VAC bus after PFC, and the 150 ns propagation delay keeps the high-side and low-side drive well synchronized to avoid transformer saturation. Low quiescent current (150 uA typical) supports ballast standby power requirements below 1 W. The shutdown pin can be tied to the lamp-end-of-life detection comparator to disable the ballast on filament failure, preventing hazardous overheating. Compared to bipolor-transistor discrete drivers, the IRS2104STRPBF halves ballast component count.
推薦
Class D Audio Amplifier Output Stage
In Class D audio amplifiers, the IRS2104STRPBF drives the half-bridge output stage that switches at 250-500 kHz to produce a PWM audio waveform later filtered to recover the analog signal. Its 35 ns rise / 70 ns fall times reduce crossover distortion and switching loss in the 600 V MOSFETs, while the 600 V VS tolerance allows direct use in 400 V audio bus designs for high-power PA systems. The shutdown pin provides a hardware mute function that pulls both outputs low within microseconds, eliminating click-and-pop on power-up and power-down. Compared to gate-drive transformers, the IRS2104STRPBF reduces audio amplifier BOM cost by 30-40 percent and eliminates transformer core saturation risks.
推薦
Solar Micro-Inverter / Optimizer
The IRS2104STRPBF drives the half-bridge stage in sub-500 W micro-inverters and DC-DC optimizers used in residential solar installations, where a 600 V rating easily covers the 60-cell panel open-circuit voltage plus margin. Its industrial temperature grade (-40C to +150C junction) suits outdoor NEMA-rated enclosures exposed to direct sunlight. The shutdown pin can be tied to a PV arc-fault detector to interrupt the converter within 1 ms, meeting UL 1741 arc-fault protection requirements. Compared to bootstrap-pump discrete designs, the IRS2104STRPBF simplifies the BOM to 2 MOSFETs, 1 IC, and 1 bootstrap capacitor per leg, reducing micro-inverter cost by roughly 20 percent.
推薦
Induction Heating Cooktop Resonant Inverter
In 1-3 kW induction cooktops, the IRS2104STRPBF drives the resonant half-bridge that delivers 20-50 kHz AC to the heating coil through an LC tank. Its 600 V VS rating tolerates the resonant overshoot of an unloaded coil, and the 150 ns propagation delay keeps the high-side and low-side switching tightly aligned, preventing destructive shoot-through. The SD pin interfaces to the pan-presence detector and over-temperature sensor for instant shutdown when cookware is removed or the coil overheats. Compared to IGBT discrete drivers, the IRS2104STRPBF enables 25 percent higher switching frequency, reducing coil size and audible noise in the final cooktop.
推薦
推薦產品摘要
工程參考資料，適用於 IRS2104STRPBF — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IRS2104SPBF | IRS2110SPBF | IRS2124SPBF | IRS2186SPBF | IRS2302STRPBF | TPG2104 |
|---|---|---|---|---|---|---|---|
| Package | SOIC-8 | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same |
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Topdiode (cross brand) |
| Topology | Half-Bridge (HS+LS, dependent) | Half-Bridge (HS+LS, dependent) | Half-Bridge (HS+LS, dependent) | Half-Bridge (HS+LS, dependent) | Half-Bridge (HS+LS, independent) | Half-Bridge (HS+LS, independent) | Half-Bridge (HS+LS, dependent) |
| High-Side Offset Voltage | -5 V to +600 V | -5 V to +600 V | -5 V to +600 V | -5 V to +600 V | -5 V to +600 V | -5 V to +600 V | -5 V to +600 V |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Source / Sink Current (typ.) | 0.29 A / 0.6 A | 0.29 A / 0.6 A | 0.29 A / 0.6 A | 0.29 A / 0.6 A | 0.29 A / 0.6 A | 0.29 A / 0.6 A | 0.29 A / 0.6 A |
| Shutdown Pin (SD) | Yes | Yes | No | Yes | No | No | Yes |
| Independent HS/LS Inputs | No (dependent) | No (dependent) | No (dependent) | No (dependent) | Yes (independent) | Yes (independent) | No (dependent) |
| Industrial Temperature Range | -40C to +125C (junction to +150C) | -40C to +150C | -40C to +150C | -40C to +150C | -40C to +150C | -40C to +150C | -40C to +125C |
主要差異化特點
- Integrated shutdown pin for hardware fault gating (對比IRS2110SPBF)
- Broad second-source ecosystem in 8-SOIC (對比TPG2104 (Topdiode))
- Industrial-grade qualification with 600 V VS rating (對比IRS2124SPBF (Infineon))
設計說明
Bootstrap supply design is the most critical detail in any half-bridge gate-driver circuit using the IRS2104STRPBF. Use a fast-recovery (trr < 100 ns) bootstrap diode such as the UF4007 or a dedicated 600 V SMD diode, and a ceramic bootstrap capacitor of 0.1 uF to 1 uF X7R sized so VBS stays above the UVLO threshold (typically 8-9 V) for the minimum on-time of the high-side switch. At 20 kHz with 50% duty cycle and 0.29 A source, a 0.47 uF cap typically suffices for Qg up to 30 nC. The diode Vbr should be at least 600 V to block the full bus voltage when the high-side is off.
Place the bootstrap capacitor and diode within 5 mm of pins 7 (HO) and 8 (VB) of the IRS2104STRPBF, and use a 0.1 uF ceramic bypass directly on pin 1 (VCC) to pin 4 (COM). The high-side gate-drive loop (HO-VB-capacitor-VS) should be kept to a minimum area to limit parasitic inductance that causes gate ringing and possible Miller-induced turn-on. A 4-layer PCB with a continuous ground plane on layer 2 directly under the SOIC-8 footprint is recommended to keep dv/dt-induced ground bounce below 1 V at the COM pin.
A common pitfall when using the IRS2104STRPBF is exceeding the VS to VB voltage rating of +20 V during high-side switching transients. If the VS node rings above 20 V above VB at turn-off, the internal high-side driver can latch up or suffer permanent damage. Add a 10 V Zener or TVS clamp (e.g., SMBJ10A) between VS and VB if the bus voltage exceeds 400 V or if long cable/leads to the half-bridge cause overshoot. Also, do not leave the SD pin floating; tie it to VCC through a 10 kohm pull-up if unused so noise does not cause spurious shutdowns.
Estimated: the IRS2104STRPBF in 8-SOIC dissipates roughly 50-100 mW per MHz of switching frequency at 50% duty cycle driving 30 nC gates. At 100 kHz with VCC=15V, total dissipation is approximately 50-80 mW, well within the SOIC-8 thermal envelope (theta_JA around 150 C/W on 1 sq inch of 2-layer copper). For high-frequency designs above 200 kHz or hot environments above 70C ambient, increase PCB copper area to at least 1 sq inch or upgrade to the 8-PDIP variant (IRS2104PBF) for ~50 percent better thermal performance.
合規資訊
RoHS compliant per Infineon datasheet PbF suffix. Industrial-grade qualification (not AEC-Q100 qualified for automotive). MSL2 per JEDEC J-STD-020. Halogen-free status not explicitly stated in retrieved web data.
