IRS2110STRPBF vs IR2110STRPBF 比較

詳細並排比較 IRS2110STRPBF 由 Infineon 與 IR2110STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2110STRPBF IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF ✓ 啟用中

規格比較

參數 IRS2110STRPBF IR2110STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge —
Number of Drivers 2 (High-Side and Low-Side) 2 (High-Side + Low-Side)
輸出數量 2 —
輸出類型 Non-Inverting Non-Inverting
Maximum Offset Voltage 500 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Source/Sink Output Current (typ.) 2.5 A / 2.5 A —
Propagation Delay ton/toff (typ.) 30 ns / 30 ns —
Rise/Fall Time (typ.) 17 ns / 25 ns —
Logic Input Compatibility CMOS/TTL compatible (3.3 V logic compatible) CMOS / LSTTL, down to 3.3 V logic
Bootstrap Diode Integrated —
Shutdown Input Active-low, forces both outputs low —
Undervoltage Lockout Yes (VCC and VBS) —
工作溫度 -40 C to +150 C —
封裝 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel 16-SOIC (SOIC W / 2110-S16)
安裝類型 Surface Mount Surface Mount
MSL 等級 3 (168 hours) [DATA_NEEDED]
Lead-Free / RoHS Lead-Free, RoHS Compliant —
功能 — Half-Bridge Gate Driver
Driven Configuration — Half-Bridge
Channel Type — Independent, Synchronous
Peak Output Current (Source/Sink) — 2.5 A / 2.5 A
Offset Voltage (High-Side, max) — 500 V
Supply Voltage (VCC) — 10 V to 20 V
Input Threshold — Logic-level compatible (3.3 V / 5 V)
Undervoltage Lockout (UVLO) — Yes (both VCC and VBS)
Bootstrap Supply — Required for high-side channel
Rise Time (Typ) — 25 ns (at 1 nF load) [DATA_NEEDED: per-datasheet spec conditions]
Fall Time (Typ) — 17 ns (at 1 nF load) [DATA_NEEDED: per-datasheet spec conditions]
Propagation Delay (Typ) — [DATA_NEEDED: per-datasheet spec conditions]
工作溫度範圍 — -40 C to +125 C
RoHS 狀態 — Compliant (Pb-free, PBF suffix)
Lead-Free — Yes (PBF suffix)
Qualification — [DATA_NEEDED: AEC-Q100 status]

資料表與資源

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