IRSM808-105MHTR vs IRSM808-105MH 比較

詳細並排比較 IRSM808-105MHTR 由 Infineon 與 IRSM808-105MH 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRSM808-105MHTR IRSM808-105MHTR - 10A 500V Half-Bridge IPM | Infineon

IRSM808-105MHTR - 10A 500V Half-Bridge IPM | Infineon

IRSM808-105MHTR ✓ 啟用中
Infineon
IRSM808-105MH IRSM808-105MH - 10A 500V Half-Bridge IPM | Infineon

IRSM808-105MH - 10A 500V Half-Bridge IPM | Infineon

IRSM808-105MH ✓ 啟用中

規格比較

參數 IRSM808-105MHTR IRSM808-105MH
品牌 Infineon Infineon
類別 Motor Drivers Motor Drivers
生命週期狀態 啟用中 啟用中
拓撲 Half-Bridge (High-Side + Low-Side) Half-bridge (2 FREDFET switches + HVIC driver)
Drain-Source Blocking Voltage (VDS) 500 V 500 V
Continuous Output Current 10 A —
Continuous Motor Power 200 W —
Power Switch Technology Trench FREDFET (low RDS(on) MOSFET) —
Logic Supply Voltage (VCC) 13.5 V to 16.5 V —
Gate Driver Integrated high-voltage level-shift HVIC Integrated HVIC (half-bridge, bootstrap)
Bootstrap Diode Integrated —
Dead-Time Generation Integrated (prevents cross-conduction) Internal (configurable via DT pin)
Protection Features Over-current, Under-voltage lockout (UVLO), Thermal shutdown —
Logic Input Compatibility 3.3 V / 5 V CMOS —
封裝 31-PQFN (8x9 mm) with exposed thermal pad 31-PQFN 8x9 mm (also called QFN 8x9, isolated)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +125C (junction) -40C to +125C (TJ)
Isolation Electrically isolated thermal pad (high-voltage creepage per IPM package) —
MSL 等級 3 (per JEDEC J-STD-020) 3
RoHS 狀態 Compliant Compliant
Continuous Drain Current (ID @ TC=25C) — 10 A
Static Drain-Source On-Resistance (RDS(on)) — 0.8 ohm max
Maximum Switching Power — 200 W
Supply Voltage (VCC) — 15 V typical
Bootstrap Supply (VB) — up to 500 V + 15 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Logic Input Voltage (HIN/LIN) — 3.3 V / 5 V compatible
Fault Output — Yes (active-low FAULT pin)
Isolation Voltage — 1500 Vrms (per package, functional isolation)

資料表與資源

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