ITS4200SMEPHUMA1 vs BTS3050EJXUMA1 比較

詳細並排比較 ITS4200SMEPHUMA1 由 Infineon 與 BTS3050EJXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ITS4200SMEPHUMA1 ITS4200SMEPHUMA1 - 1.4A Smart High-Side Switch | Infineon

ITS4200SMEPHUMA1 - 1.4A Smart High-Side Switch | Infineon

ITS4200SMEPHUMA1 ✓ 啟用中
Infineon
BTS3050EJXUMA1 BTS3050EJXUMA1 - 50mΩ 4A Smart Low-Side Switch | Infineon

BTS3050EJXUMA1 - 50mΩ 4A Smart Low-Side Switch | Infineon

BTS3050EJXUMA1 ✓ 啟用中

規格比較

參數 ITS4200SMEPHUMA1 BTS3050EJXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Smart High-Side Power Switch Smart Low-Side Power Switch
拓撲 High-Side, N-Channel MOSFET Low-Side Switch (1:1)
Number of Channels 1 1 (Single channel)
Continuous Load Current 1.4 A 4 A
On-State Resistance (Rdson) 150 milliohm (typical) —
Supply Voltage Range -3 V to 45 V —
Overvoltage Protection Yes (load-dump resilient) —
Undervoltage Shutdown Yes —
Short Circuit Protection Yes —
過熱關機 Yes (with auto-restart) —
Current Limitation Yes —
Input Logic Type Current-Controlled, CMOS-compatible —
Inductive Load Switching Yes —
封裝 PG-SOT223-4 (4-pin, 3+Tab) PG-TDSO-8-31 (TDSO8-31)
安裝類型 Surface Mount Surface Mount
工作溫度 -40C to +125C (automotive grade) —
AEC-Q100 Qualification Yes —
Technology Smart Power (vertical N-DMOS + charge pump + CMOS logic) N-Channel Vertical Power MOSFET (HITFET +12V)
RoHS 狀態 Compliant Compliant
On-State Resistance (RDS(on)) — 50 mΩ (typical at 25 °C)
Supply Voltage (Vbb) — [DATA_NEEDED: Vbb max rating]
Load Voltage — 12 V automotive nominal
ESD Protection — Yes (on IN pin / Source / Ground)
Thermal Protection — Auto-restart overtemperature shutdown
電流限制 — [DATA_NEEDED: ILIM value]
工作溫度範圍 — [DATA_NEEDED: Tj range]
Automotive Grade — AEC-Q100 qualified (HITFET +12V family)

資料表與資源

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