K3K9K90BM-MGCP vs K3LKCKC0BM-MGCP 比較

詳細並排比較 K3K9K90BM-MGCP 由 Samsung Electronics 與 K3LKCKC0BM-MGCP 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K3K9K90BM-MGCP K3K9K90BM-MGCP - LPDDR5 DRAM | Samsung Semiconductor

K3K9K90BM-MGCP - LPDDR5 DRAM | Samsung Semiconductor

K3K9K90BM-MGCP ✓ 啟用中
Samsung Electronics
K3LKCKC0BM-MGCP K3LKCKC0BM-MGCP - 64Gb LPDDR5 6400Mbps DRAM | Samsung

K3LKCKC0BM-MGCP - 64Gb LPDDR5 6400Mbps DRAM | Samsung

K3LKCKC0BM-MGCP ✓ 啟用中

規格比較

參數 K3K9K90BM-MGCP K3LKCKC0BM-MGCP
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 LPDDR5 SDRAM (CMOS) LPDDR5 SDRAM (DRAM)
組織 [DATA_NEEDED: density and organization] —
Pin Speed Up to 6400 Mbps (family maximum per Samsung LPDDR5 page) —
Interface Width x32 (family standard for K3K/K3L BM packages) —
封裝 PBGA (Plastic Ball Grid Array) FBGA-315 (PBGA315)
Ball Count [DATA_NEEDED: ball count] —
工作溫度 [DATA_NEEDED: operating temperature range] -25 C to +85 C
Supply Voltage (VDD) [DATA_NEEDED: VDD voltage] —
Refresh Self-refresh with per-bank refresh support (LPDDR5 standard) —
Power Saving vs LPDDR4X Approximately 20% (Samsung published figure) —
Max Bandwidth Up to 51.2 GB/s (family maximum per Samsung LPDDR5 page) —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
Moisture Sensitivity Level [DATA_NEEDED: MSL level] —
Clocking WCK (word clock) architecture —
Standards JEDEC LPDDR5 —
記憶體容量 — 64 Gbit
Memory Organization — 2G x32
資料速率 — 6400 Mbps
介面 — Parallel
Technology — CMOS
Supply Voltages — 500 mV, 900 mV, 1.05 V, 1.8 V
Volatile / Non-Volatile — Volatile
Clock Frequency — [DATA_NEEDED: clock frequency]
Access Time — [DATA_NEEDED: access time]
Power Consumption - Active — [DATA_NEEDED: active power]
Power Consumption - Standby — [DATA_NEEDED: standby power]
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

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