K3KCKC0BM-JGCT vs K3LKCKC0BM-MGCP 比較
詳細並排比較 K3KCKC0BM-JGCT 由 Samsung Electronics 與 K3LKCKC0BM-MGCP 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3KCKC0BM-JGCT | K3LKCKC0BM-MGCP |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5 SDRAM | LPDDR5 SDRAM (DRAM) |
| Density | 64 Gb | — |
| 介面 | LPDDR5 (Low Power Double Data Rate 5) | Parallel |
| 組織 | [DATA_NEEDED: organization (x32/x16)] | — |
| Package Type | FBGA (fine-pitch ball grid array) | — |
| Ball Count | [DATA_NEEDED: ball count] | — |
| Speed Grade Suffix | JGCT | — |
| Max Pin Speed (family reference K3LKCKC0BM-MGCP) | 6400 Mbps | — |
| Supply Voltage Core (VDD1) | [DATA_NEEDED: VDD1 voltage] | — |
| Supply Voltage I/O (VDD2/VDDQ) | [DATA_NEEDED: VDDQ voltage] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -25 C to +85 C |
| 安裝類型 | Surface Mount | Surface Mount |
| Refresh Mode | Self-refresh with partial array self-refresh (PASR) | — |
| Power Features | DVFSC, deep power-down | — |
| RoHS 狀態 | unknown | Compliant |
| Packaging | [DATA_NEEDED: packing type and standard quantity] | — |
| 記憶體容量 | — | 64 Gbit |
| Memory Organization | — | 2G x32 |
| 資料速率 | — | 6400 Mbps |
| Technology | — | CMOS |
| Supply Voltages | — | 500 mV, 900 mV, 1.05 V, 1.8 V |
| 封裝 | — | FBGA-315 (PBGA315) |
| Volatile / Non-Volatile | — | Volatile |
| Clock Frequency | — | [DATA_NEEDED: clock frequency] |
| Access Time | — | [DATA_NEEDED: access time] |
| Power Consumption - Active | — | [DATA_NEEDED: active power] |
| Power Consumption - Standby | — | [DATA_NEEDED: standby power] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |