K3KL3L30DM-BGCU vs K3LK3L30CM-BGCU 比較
詳細並排比較 K3KL3L30DM-BGCU 由 Samsung Electronics 與 K3LK3L30CM-BGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3KL3L30DM-BGCU | K3LK3L30CM-BGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 停產終止 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $45.94 | — |
| 記憶體類型 | LPDDR5X DRAM | LPDDR5X SDRAM (Low Power Double Data Rate 5X) |
| Density | 64 Gb | 64 Gb (8 GB) |
| 組織 | x64 | [DATA_NEEDED: organization / bus width] |
| 資料速率 | 8533 Mbps | 8533 Mbps per pin |
| Supply Voltage (VDD1) | 1.8 V | — |
| Supply Voltage (VDD2) | 1.05 V | — |
| Supply Voltage (VDDQ) | 0.5 V | — |
| Core Voltage Rail | 0.9 V | — |
| 工作溫度 | -25 C to +85 C | [DATA_NEEDED: operating temperature range] |
| 封裝 | 496-ball FBGA | 496-ball FBGA (BGC) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 介面 | LPDDR5X (JEDEC low-power DRAM interface) | — |
| Product Status | EOL | — |
| 品牌 | Samsung Semiconductor | — |
| Application Segment | Mobile, consumer electronics, embedded systems | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Die Configuration | — | Stacked DRAM die (multi-die package) |
| Supply Voltage VDD | — | [DATA_NEEDED: VDD voltage] |
| Supply Voltage VDDQ | — | [DATA_NEEDED: VDDQ voltage] |
| Power Efficiency | — | Approx. 25% better than previous LPDDR generation (per Samsung LPDDR5X announcement) |
| Speed vs Prior Generation | — | Up to 1.25x faster than previous generation (per Samsung LPDDR5X announcement) |
| Target Applications | — | AI devices, in-vehicle devices, mobile computing |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | — | [DATA_NEEDED: tray / reel and standard quantity] |