K3KL4L40EM-BGCU vs K3KLELE0DM-BGCU 比較
詳細並排比較 K3KL4L40EM-BGCU 由 Samsung Electro-Mechanics 與 K3KLELE0DM-BGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K3KL4L40EM-BGCU - 12GB LPDDR5X DRAM 8533Mbps | Samsung
K3KL4L40EM-BGCU ✓ 啟用中
規格比較
| 參數 | K3KL4L40EM-BGCU | K3KLELE0DM-BGCU |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 停產終止 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $78.75 | — |
| 記憶體類型 | LPDDR5X DRAM | LPDDR5X SDRAM |
| Density | 96 Gbit (12 GB) | 144 Gb |
| 組織 | x64 | x64 |
| 資料速率 | 8533 Mbps | 8533 Mbps |
| 介面 | LPDDR5X (LPDDR5 JEDEC-based) | LPDDR5X |
| 封裝 | 496-ball FBGA | 496-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 供應電壓 | [DATA_NEEDED: core supply voltage (VDD)] | — |
| Application | Tablet, Smartphone, Wearable Devices | — |
| Product Family | Samsung LPDDR5X (K3KL4L40EM series) | — |
| Companion Densities | 64 Gbit (K3KL3L30DM-BGCU), 128 Gbit (K3KL5L50DM-BGCU) | — |
| Power Characteristic | Ultra-low-power mobile DRAM | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -25 C to +85 C |
| RoHS 狀態 | unknown | [DATA_NEEDED: RoHS status] |
| Ball Count | 496 | — |
| Storage Class | Volatile memory (DRAM) | — |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.9 V |
| Supply Voltage (VDDCA) | — | 0.5 V |
| Application Class | — | AI and in-vehicle devices |
| Product Status | — | EOL |
| Power Efficiency vs Previous Generation | — | Approx. 25% better (per Samsung) |
| Speed vs Previous Generation | — | Approx. 1.25x faster (per Samsung) |