K3KL7L70EM-MGCU vs K3KL9L90DM-MGCU 比較

詳細並排比較 K3KL7L70EM-MGCU 由 Samsung Electronics 與 K3KL9L90DM-MGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K3KL7L70EM-MGCU K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung

K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung

K3KL7L70EM-MGCU ✓ 啟用中
Samsung Electronics
K3KL9L90DM-MGCU K3KL9L90DM-MGCU - LPDDR5X 64Gb x32 8533Mbps FBGA | Samsung

K3KL9L90DM-MGCU - LPDDR5X 64Gb x32 8533Mbps FBGA | Samsung

K3KL9L90DM-MGCU ✓ 啟用中

規格比較

參數 K3KL7L70EM-MGCU K3KL9L90DM-MGCU
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
Manufacturer Samsung Electronics Samsung Electronics
記憶體類型 LPDDR5X SDRAM LPDDR5X SDRAM
Density 12 Gbit (1.5 GB) —
封裝 315-ball FBGA 315-ball FBGA
安裝類型 Surface Mount Surface Mount
Speed Grade Suffix -MGCU —
資料速率 [DATA_NEEDED: data rate Mbps/pin] 8533 Mbps per pin
Supply Voltage VDD [DATA_NEEDED: VDD core voltage] —
Supply Voltage VDDQ [DATA_NEEDED: VDDQ I/O voltage] —
組織 [DATA_NEEDED: organization x32] x32
工作溫度 [DATA_NEEDED: operating temperature range] -25C to +85C
Bank Architecture [DATA_NEEDED: bank group count] —
CAS 延遲 [DATA_NEEDED: CAS latency] —
Refresh Self-refresh and per-bank refresh per JEDEC LPDDR5X —
Termination On-Die Termination (ODT) —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
Total Density — 64 Gbit (8 GB)
I/O Voltage Class — [DATA_NEEDED: VDDQ voltage]
Core Supply — [DATA_NEEDED: VDD voltage]
Standard — JEDEC LPDDR5X (LPDDR5 family)
Channel Configuration — 32-bit channel
Speed Class Designator — LPDDR5X-8533
Density per Die — 16 Gbit per channel density (per distributor data)

資料表與資源

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