K3KL7L70EM-MGCU vs K3LK8L80CM-MGCT 比較
詳細並排比較 K3KL7L70EM-MGCU 由 Samsung Electronics 與 K3LK8L80CM-MGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung
K3KL7L70EM-MGCU ✓ 啟用中規格比較
| 參數 | K3KL7L70EM-MGCU | K3LK8L80CM-MGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | — |
| 記憶體類型 | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 12 Gbit (1.5 GB) | 32 Gbit (4 GB) |
| 封裝 | 315-ball FBGA | FBGA-315 (315-ball) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| Speed Grade Suffix | -MGCU | CM-MGCT |
| 資料速率 | [DATA_NEEDED: data rate Mbps/pin] | — |
| Supply Voltage VDD | [DATA_NEEDED: VDD core voltage] | — |
| Supply Voltage VDDQ | [DATA_NEEDED: VDDQ I/O voltage] | — |
| 組織 | [DATA_NEEDED: organization x32] | x32 |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Bank Architecture | [DATA_NEEDED: bank group count] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self-refresh and per-bank refresh per JEDEC LPDDR5X | — |
| Termination | On-Die Termination (ODT) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| Max Data Rate | — | 7500 Mbps |
| Supply Voltages | — | 0.5 V, 900 mV, 1.05 V, 1.8 V (multi-rail) |
| 介面 | — | LPDDR5X (JEDEC low-power DDR) |
| Power Efficiency | — | ~25% improvement vs LPDDR5 |
| Application Class | — | Mobile, PC, automotive, on-device AI |
| Package Family | — | FBGA -> BGA -> surface mount |
| Typical End Products | — | Smartphones, tablets, edge AI devices |
| Refresh / Standby Modes | — | Self-refresh, deep power-down (per LPDDR5X protocol) |