K3KL9L90DM-MGCU vs K3KL7L70EM-MGCU 比較

詳細並排比較 K3KL9L90DM-MGCU 由 Samsung Electronics 與 K3KL7L70EM-MGCU 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K3KL9L90DM-MGCU K3KL9L90DM-MGCU - LPDDR5X 64Gb x32 8533Mbps FBGA | Samsung

K3KL9L90DM-MGCU - LPDDR5X 64Gb x32 8533Mbps FBGA | Samsung

K3KL9L90DM-MGCU ✓ 啟用中
Samsung Electronics
K3KL7L70EM-MGCU K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung

K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung

K3KL7L70EM-MGCU ✓ 啟用中

規格比較

參數 K3KL9L90DM-MGCU K3KL7L70EM-MGCU
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 LPDDR5X SDRAM LPDDR5X SDRAM
Total Density 64 Gbit (8 GB) —
組織 x32 [DATA_NEEDED: organization x32]
資料速率 8533 Mbps per pin [DATA_NEEDED: data rate Mbps/pin]
封裝 315-ball FBGA 315-ball FBGA
安裝類型 Surface Mount Surface Mount
工作溫度 -25C to +85C [DATA_NEEDED: operating temperature range]
I/O Voltage Class [DATA_NEEDED: VDDQ voltage] —
Core Supply [DATA_NEEDED: VDD voltage] —
Standard JEDEC LPDDR5X (LPDDR5 family) —
Channel Configuration 32-bit channel —
Speed Class Designator LPDDR5X-8533 —
Density per Die 16 Gbit per channel density (per distributor data) —
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
Manufacturer Samsung Electronics Samsung Electronics
Density — 12 Gbit (1.5 GB)
Speed Grade Suffix — -MGCU
Supply Voltage VDD — [DATA_NEEDED: VDD core voltage]
Supply Voltage VDDQ — [DATA_NEEDED: VDDQ I/O voltage]
Bank Architecture — [DATA_NEEDED: bank group count]
CAS 延遲 — [DATA_NEEDED: CAS latency]
Refresh — Self-refresh and per-bank refresh per JEDEC LPDDR5X
Termination — On-Die Termination (ODT)
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

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