K3KLALA0DM-MGCU vs K3KLALA0DM-JGCT 比較
詳細並排比較 K3KLALA0DM-MGCU 由 Samsung Electronics 與 K3KLALA0DM-JGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3KLALA0DM-JGCT - LPDDR5X DRAM x32 | Samsung Semiconductor
K3KLALA0DM-JGCT ✓ 啟用中規格比較
| 參數 | K3KLALA0DM-MGCU | K3KLALA0DM-JGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 16 Gbit (2 GB) per die | [DATA_NEEDED: density per die] |
| Maximum Data Rate | 6400 Mbps per pin | — |
| 介面 | LPDDR5X (LPDDR5X-class channel) | — |
| 封裝 | 315-ball FBGA | — |
| 組織 | [DATA_NEEDED: die organization x16/x32] | x32 |
| Supply Voltage - Core (VDD1) | [DATA_NEEDED: VDD1 voltage] | — |
| Supply Voltage - I/O (VDD2/VDDQ) | [DATA_NEEDED: VDDQ voltage] | — |
| Speed Grade Suffix | MGCU (6400 Mbps class) | — |
| Grade | Mobile / Low Power Mobile Grade | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Ball Pitch | [DATA_NEEDED: ball pitch mm] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Place of Origin | Johor, Malaysia (per distributor listing) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| DRAM Process | Advanced DRAM node (EUV-class per Samsung LPDDR5X family) | — |
| Manufacturer | — | Samsung Electronics |
| Product Status | — | Mass Production |
| Family Max Data Rate | — | Up to 8.5 Gbps (LPDDR5X family) |
| Family Power Efficiency | — | Approx. 20% better than LPDDR5 |
| Family Max Density | — | Up to 64 GB (family) |
| Data Rate (this speed grade) | — | [DATA_NEEDED: Mbps speed grade] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD voltage] |
| Supply Voltage (VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Package Type | — | [DATA_NEEDED: FBGA ball count / package code] |
| Standards Compliance | — | JEDEC LPDDR5X |