K3KLALA0DM-MGCU vs K3KLALA0DM-JGCT 비교
다음의 상세 나란히 비교: K3KLALA0DM-MGCU 제조: Samsung Electronics 및 K3KLALA0DM-JGCT 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | K3KLALA0DM-MGCU | K3KLALA0DM-JGCT |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $0.00 |
| 메모리 유형 | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 16 Gbit (2 GB) per die | [DATA_NEEDED: density per die] |
| Maximum Data Rate | 6400 Mbps per pin | — |
| 인터페이스 | LPDDR5X (LPDDR5X-class channel) | — |
| 패키지 | 315-ball FBGA | — |
| 메모리 구성 | [DATA_NEEDED: die organization x16/x32] | x32 |
| Supply Voltage - Core (VDD1) | [DATA_NEEDED: VDD1 voltage] | — |
| Supply Voltage - I/O (VDD2/VDDQ) | [DATA_NEEDED: VDDQ voltage] | — |
| Speed Grade Suffix | MGCU (6400 Mbps class) | — |
| Grade | Mobile / Low Power Mobile Grade | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Ball Pitch | [DATA_NEEDED: ball pitch mm] | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Place of Origin | Johor, Malaysia (per distributor listing) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| DRAM Process | Advanced DRAM node (EUV-class per Samsung LPDDR5X family) | — |
| Manufacturer | — | Samsung Electronics |
| Product Status | — | Mass Production |
| Family Max Data Rate | — | Up to 8.5 Gbps (LPDDR5X family) |
| Family Power Efficiency | — | Approx. 20% better than LPDDR5 |
| Family Max Density | — | Up to 64 GB (family) |
| Data Rate (this speed grade) | — | [DATA_NEEDED: Mbps speed grade] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD voltage] |
| Supply Voltage (VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Package Type | — | [DATA_NEEDED: FBGA ball count / package code] |
| Standards Compliance | — | JEDEC LPDDR5X |