K3LK3L30CM-BGCU vs K3KL2L20DM-JGCT 比較
詳細並排比較 K3LK3L30CM-BGCU 由 Samsung Electronics 與 K3KL2L20DM-JGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3LK3L30CM-BGCU | K3KL2L20DM-JGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5X SDRAM (Low Power Double Data Rate 5X) | LPDDR5X SDRAM |
| Density | 64 Gb (8 GB) | 48 Gb |
| 資料速率 | 8533 Mbps per pin | 7500 Mbps |
| 組織 | [DATA_NEEDED: organization / bus width] | x64 |
| 封裝 | 496-ball FBGA (BGC) | 441-ball FBGA |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| Die Configuration | Stacked DRAM die (multi-die package) | — |
| Supply Voltage VDD | [DATA_NEEDED: VDD voltage] | — |
| Supply Voltage VDDQ | [DATA_NEEDED: VDDQ voltage] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Power Efficiency | Approx. 25% better than previous LPDDR generation (per Samsung LPDDR5X announcement) | — |
| Speed vs Prior Generation | Up to 1.25x faster than previous generation (per Samsung LPDDR5X announcement) | — |
| Target Applications | AI devices, in-vehicle devices, mobile computing | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | unknown |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Packaging | [DATA_NEEDED: tray / reel and standard quantity] | — |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| 介面 | — | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |