K3LKCKC0BM-MGCP vs K3KCKC0BM-JGCT 比較
詳細並排比較 K3LKCKC0BM-MGCP 由 Samsung Electronics 與 K3KCKC0BM-JGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K3LKCKC0BM-MGCP | K3KCKC0BM-JGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | LPDDR5 SDRAM (DRAM) | LPDDR5 SDRAM |
| 記憶體容量 | 64 Gbit | — |
| Memory Organization | 2G x32 | — |
| 資料速率 | 6400 Mbps | — |
| 介面 | Parallel | LPDDR5 (Low Power Double Data Rate 5) |
| Technology | CMOS | — |
| Supply Voltages | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| 工作溫度 | -25 C to +85 C | [DATA_NEEDED: operating temperature range] |
| 封裝 | FBGA-315 (PBGA315) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Volatile / Non-Volatile | Volatile | — |
| RoHS 狀態 | Compliant | unknown |
| Clock Frequency | [DATA_NEEDED: clock frequency] | — |
| Access Time | [DATA_NEEDED: access time] | — |
| Power Consumption - Active | [DATA_NEEDED: active power] | — |
| Power Consumption - Standby | [DATA_NEEDED: standby power] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 64 Gb |
| 組織 | — | [DATA_NEEDED: organization (x32/x16)] |
| Package Type | — | FBGA (fine-pitch ball grid array) |
| Ball Count | — | [DATA_NEEDED: ball count] |
| Speed Grade Suffix | — | JGCT |
| Max Pin Speed (family reference K3LKCKC0BM-MGCP) | — | 6400 Mbps |
| Supply Voltage Core (VDD1) | — | [DATA_NEEDED: VDD1 voltage] |
| Supply Voltage I/O (VDD2/VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Refresh Mode | — | Self-refresh with partial array self-refresh (PASR) |
| Power Features | — | DVFSC, deep power-down |
| Packaging | — | [DATA_NEEDED: packing type and standard quantity] |