K9DUGY8S0M-CCK0 vs K9EUGY8S0M-BCK0 比較
詳細並排比較 K9DUGY8S0M-CCK0 由 Samsung Electronics 與 K9EUGY8S0M-BCK0 由 Samsung Electro-Mechanics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ 啟用中規格比較
| 參數 | K9DUGY8S0M-CCK0 | K9EUGY8S0M-BCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electro-Mechanics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 series NAND Flash (V-NAND) | K9-series V-NAND Flash |
| 記憶體類型 | NAND Flash (raw, controller-managed) | NAND Flash (non-volatile) |
| Cell Technology | V-NAND (vertical charge-trap) | — |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: memory density] |
| 介面 | [DATA_NEEDED: interface type/width] | — |
| 供應電壓 | [DATA_NEEDED: VCC range] | [DATA_NEEDED: VCC voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Read Time | [DATA_NEEDED: tR] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| 封裝 | [DATA_NEEDED: package code and pin count] | [DATA_NEEDED: package type and dimensions] |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | unknown | [DATA_NEEDED: RoHS status] |
| P/E Cycle Endurance | [DATA_NEEDED: endurance] | — |
| 組織 | — | [DATA_NEEDED: organization x8/x16] |
| Cell Type | — | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| VCCQ Voltage | — | [DATA_NEEDED: VCCQ voltage] |
| Access Time (tR) | — | [DATA_NEEDED: read access time] |
| Program Time (tPROG) | — | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Packing | — | [DATA_NEEDED: tray or tape and reel] |