K9HUGY8J5B-BCK0 vs K9KUGY8J7C-BCK0 比較
詳細並排比較 K9HUGY8J5B-BCK0 由 Samsung Electronics 與 K9KUGY8J7C-BCK0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ 啟用中規格比較
| 參數 | K9HUGY8J5B-BCK0 | K9KUGY8J7C-BCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9HUG (V-NAND flash) | — |
| 記憶體類型 | NAND Flash (3D V-NAND) | NAND Flash (TLC V-NAND) |
| Density | [DATA_NEEDED: device density] | 1 Tb |
| Cell Type | [DATA_NEEDED: SLC/MLC/TLC/QLC] | TLC (3 bits/cell) |
| 組織 | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Bus Width | [DATA_NEEDED: x8 or x16] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | [DATA_NEEDED: VCC range in V] |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range] | [DATA_NEEDED: VCCQ range in V] |
| 介面 | [DATA_NEEDED: asynchronous/toggle DDR] | — |
| Page Program Time | [DATA_NEEDED: tPROG] | — |
| Page Read Time | [DATA_NEEDED: tR] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Endurance | [DATA_NEEDED: P/E cycles] | — |
| 封裝 | [DATA_NEEDED: package code, e.g. FBGA] | — |
| 工作溫度 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: temperature range in C] |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| 介面類型 | — | [DATA_NEEDED: toggle DDR / ONFI mode] |
| Page Size | — | [DATA_NEEDED: page size in KB] |
| Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |
| Package Type | — | BGA |
| Package Code | — | [DATA_NEEDED: package code / ball count] |
| Grade Suffix | — | BCK0 |