K9XXG08U0M vs K9HCG08U1M 比較
詳細並排比較 K9XXG08U0M 由 Samsung Electronics 與 K9HCG08U1M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9XXG08U0M | K9HCG08U1M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | Obsolete | 啟用中 |
| 記憶體類型 | NAND Flash | — |
| Density | 8 G-bit | — |
| 組織 | 1G x 8 bit | 8G x 8 |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| 供應電壓 | 2.7 V to 3.6 V (3.3V device) | [DATA_NEEDED: supply voltage] |
| 介面 | 8-bit parallel NAND (command/address/data multiplexed) | — |
| Page Read Time | 20 us | — |
| 封裝 | 48-pin TSOP-I | TSOP-48 (PDSO48) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -40C to +105C (TA) |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | — |
| ECC Requirement | External ECC by host controller | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Memory Technology | — | MLC NAND Flash |
| Total Capacity | — | 64 Gbit |
| 資料匯流排寬度 | — | 8 bit |
| 介面類型 | — | Asynchronous NAND (multiplexed address/data/command) |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Read Time (tR) | — | [DATA_NEEDED: read time] |
| Program Time (tPROG) | — | [DATA_NEEDED: program time] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| Ready/Busy Output | — | Yes (R/B#) |
| Die Technology | — | Samsung E-die (per datasheet family) |
| Full Ordering Code | — | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 |