K9XXG08UXM vs K9XXG08U0M 比較
詳細並排比較 K9XXG08UXM 由 Samsung Electronics 與 K9XXG08U0M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9XXG08UXM | K9XXG08U0M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | Obsolete | Obsolete |
| 記憶體容量 | 2G x 8 Bit (2Gb) | — |
| Memory Cell Array Organization | (1G + 32M) bit x 8 bit | — |
| Data Register | (2K + 64) bit x 8 bit | — |
| 供應電壓 | 2.7 V to 3.6 V | 2.7 V to 3.6 V (3.3V device) |
| Page Size | (2K + 64) Byte | — |
| Block Size | (256K + 8K) Byte | — |
| Program Operation | Automatic Page Program, (2K + 64) Byte | — |
| Erase Operation | Automatic Block Erase, (256K + 8K) Byte | — |
| I/O Interface | 8-bit multiplexed address/data/command | — |
| Control Signals | CLE, ALE, CE, RE, WE, WP, R/B | — |
| Cell Type | SLC (single-level cell) NAND | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| 封裝 | 48-pin TSOP | 48-pin TSOP-I |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Access Time (tR) | [DATA_NEEDED: Access Time] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| 記憶體類型 | — | NAND Flash |
| Density | — | 8 G-bit |
| 組織 | — | 1G x 8 bit |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| 介面 | — | 8-bit parallel NAND (command/address/data multiplexed) |
| Page Read Time | — | 20 us |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |