M25PE40-VMN3TPB vs M25PE10-VMN3TPB 比較
詳細並排比較 M25PE40-VMN3TPB 由 Micron Technology 與 M25PE10-VMN3TPB 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M25PE40-VMN3TPB - 4Mb SPI NOR Flash 75MHz 8-SO | Micron Technology
M25PE40-VMN3TPB ObsoleteMicron Technology
M25PE10-VMN3TPB - 1Mb SPI NOR Flash 75MHz AEC-Q100 | Micron
M25PE10-VMN3TPB Obsolete規格比較
| 參數 | M25PE40-VMN3TPB | M25PE10-VMN3TPB |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | Obsolete | Obsolete |
| 記憶體類型 | Non-Volatile Flash - NOR | FLASH - NOR (serial paged) |
| Memory Format | FLASH | — |
| 記憶體容量 | 4Mb (512K x 8) | 1 Mbit (128K x 8) |
| 介面 | SPI | SPI |
| Clock Frequency | 75 MHz | 75 MHz |
| 供應電壓 | 2.7 V to 3.6 V | 3V/3.3V |
| Write Cycle Time - Word, Page | 15 ms, 3 ms | — |
| Page Program Time | 0.8 ms (typ) | — |
| Page Write Time | 11 ms (typ) | — |
| Page Erase Time | 10 ms (typ) | — |
| Subsector Erase | 4 KB | — |
| Sector Erase | 64 KB | — |
| Bulk Erase | 4 Mb | — |
| Deep Power-Down Current | 1 uA (typ) | — |
| Electronic Signature | JEDEC 2-byte signature 8013h | — |
| Endurance | More than 100,000 program/erase cycles | — |
| Write Protection | Software (64KB sector basis) and hardware BP0/BP1/BP2 | — |
| 封裝 | 8-SOIC (0.154in, 3.90mm width) | 8-SOIC (SO-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| Part Status | Obsolete | Obsolete |
| Write Cycle Time - Page | — | 3 ms |
| Write Cycle Time - Word | — | 15 ms |
| Packaging | — | Tape & Reel (TR) |
| Qualification | — | Automotive AEC-Q100 |
| Programming Granularity | — | 1 to 256 bytes per Page Write / Page Program |
| 類別 | — | Memory chips - Flash |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| Access Time | — | [DATA_NEEDED: access time] |