M29F400FT55N3F2 vs M29F400FT55N3E2 比較
詳細並排比較 M29F400FT55N3F2 由 Micron Technology 與 M29F400FT55N3E2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ 啟用中規格比較
| 參數 | M29F400FT55N3F2 | M29F400FT55N3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash (SLC) | NOR Flash (Parallel) |
| 記憶體容量 | 4 Mbit | — |
| 組織 | 256K x 16 | — |
| 介面 | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V | 5 V (single supply) |
| Block Architecture | Top boot block | — |
| 封裝 | 44-SO (SOP-44) | 44-SO (SOP-44) |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | [DATA_NEEDED: Program/Erase Cycles] |
| 工作溫度 | [DATA_NEEDED: min operating temperature] | [DATA_NEEDED: Operating Temperature Range] |
| Density | — | 4 Mbit (512K x 8) |
| Boot Block Architecture | — | Top boot (FT variant) |
| Programming Supply | — | No 12 V VPP required (5.0 V programming) |
| Command Set | — | JEDEC standard compatible |
| Data Retention | — | [DATA_NEEDED: Data Retention] |
| Active Read Current | — | [DATA_NEEDED: Active Current] |
| Standby Current | — | [DATA_NEEDED: Standby Current] |
| Block Protection | — | Hardware block protection |
| MSL 等級 | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS Status] |