M29W160EB70N3F vs M29W160FB70N3E 比較

詳細並排比較 M29W160EB70N3F 由 Micron Technology 與 M29W160FB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W160EB70N3F M29W160EB70N3F - 16Mbit NOR Flash, 70ns, 48-TSOP | Micron

M29W160EB70N3F - 16Mbit NOR Flash, 70ns, 48-TSOP | Micron

M29W160EB70N3F ✓ 啟用中
Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ 啟用中

規格比較

參數 M29W160EB70N3F M29W160FB70N3E
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 FLASH - NOR FLASH - NOR
記憶體容量 16 Mbit (2M x8 / 1M x16) 16 Mbit (2M x8 / 1M x16)
Access Time 70 ns 70 ns
介面 Parallel (Byte/Word-wide) Parallel
Supply Voltage (VCC) 2.7 V to 3.6 V 3.0 V to 3.6 V
Programming Time 10 us per byte/word (typical) —
Boot Block Position Bottom boot block —
Bus Configuration x8 / x16 selectable (BYTE# pin) x8 / x16 selectable (BYTE# pin)
封裝 / 外殼 48-TSOP (0.724 in, 18.40 mm width) 48-TFSOP (0.724 in, 18.40 mm width)
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel Tray
Qualification Automotive, AEC-Q100 —
Erase Architecture Block erase (boot block + main blocks) —
Common Flash Interface Yes (CFI compliant) —
Reset Input RESET# hardware reset pin —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
Programming Voltage — Single supply (no separate VPP required)
Architecture — Boot block
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Status Output — Data polling / toggle bit
Block Protection — Yes (boot block protection)

資料表與資源

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