MC8641DVU1000GE vs MC8641DTVU1000GE 比較

詳細並排比較 MC8641DVU1000GE 由 NXP Semiconductors 與 MC8641DTVU1000GE 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MC8641DVU1000GE MC8641DVU1000GE - Dual 1GHz e600 SoC, 1023-FCBGA | NXP

MC8641DVU1000GE - Dual 1GHz e600 SoC, 1023-FCBGA | NXP

MC8641DVU1000GE ⚠ 最後購買機會
NXP Semiconductors
MC8641DTVU1000GE MC8641DTVU1000GE - Dual-Core 1GHz PowerPC SoC | NXP

MC8641DTVU1000GE - Dual-Core 1GHz PowerPC SoC | NXP

MC8641DTVU1000GE ⚠ 最後購買機會

規格比較

參數 MC8641DVU1000GE MC8641DTVU1000GE
品牌 NXP Semiconductors NXP Semiconductors
類別 Microcontrollers Microcontrollers
生命週期狀態 最後購買 最後購買
Processor Type PowerPC e600 MPC86xx 32-Bit PowerPC e600 (MPC86xx) Dual-Core SoC
Core Count 2 (dual-core) —
Core Architecture Power Architecture, superscalar, 7-stage pipeline Superscalar e600, 32-bit, 3-issue / 7-stage pipeline
Core Frequency 1.0 GHz 1.0 GHz
Maximum Core Frequency Up to 1.5 GHz (family max) —
Core Supply Voltage 1.05 V 1.05 V (0.95 V variant per part suffix)
SIMD Engine AltiVec (128-bit vector unit) AltiVec per core
L1 Cache 32 KB instruction + 32 KB data per core —
L2 Cache 1 MB unified backside —
Memory Controller DDR1 / DDR2 with ECC Integrated DDR1/DDR2 with ECC
Ethernet 4 x 10/100/1000 Mbps MAC —
PCI Express 2 x PCIe interfaces PCIe interfaces integrated
Serial RapidIO 2 x SRIO ports —
封裝 1023-ball FCCBGA (33 x 33 mm) 1023-ball FCCBGA (33x33 mm)
工作溫度 0 C to +105 C -40C to +105C
Silicon Revision Rev 3.0 Rev 3.0 (G8)
Number of Cores — 2
I/O Supply Voltages — 1.8 V / 2.5 V / 3.3 V
Integrated MACs — Gigabit Ethernet (GbE)
Serial RapidIO (SRIO) — Integrated SRIO fabric
安裝類型 — Surface Mount (BGA)
Process Technology — 0.09 um CMOS
RoHS 狀態 — Compliant (per distributor listings)

資料表與資源

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