MRF7S19120NR1 vs MRF7S19080HR3 比較
詳細並排比較 MRF7S19120NR1 由 NXP Semiconductors 與 MRF7S19080HR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
MRF7S19080HR3 ✓ 啟用中規格比較
| 參數 | MRF7S19120NR1 | MRF7S19080HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | LDMOS, N-Channel Enhancement-Mode Lateral | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power MOSFET (Gen7 HV8 LDMOS) | HV7 RF Power LDMOS |
| Frequency Range | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz |
| Output Power (Avg, W-CDMA) | 36 W | — |
| Drain-Source Voltage (Vds max) | 65 V (rated) | — |
| Test Supply Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 1.2 A | — |
| Power Gain (typ) | 18 dB at 1.99 GHz | — |
| Operating Class | Class AB, Class C | — |
| 封裝 | TO-270 WB-4 (overmolded plastic, 4-lead) | NI-780H-2L (ceramic, flanged) |
| 安裝方式 | Surface Mount / Flange Mount | — |
| 腳位數 | 5 (per Freescale/NXP datasheet) | — |
| Lead Free Status | Lead Free per datasheet | Lead Free |
| Target Modulation | W-CDMA, CDMA, multi-carrier GSM | — |
| Application | CDMA / W-CDMA base station final-stage PA | — |
| Test Frequency | — | 1.99 GHz (1987.5 MHz) |
| Drain-Source Voltage (Vdss) Rated | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V |
| Quiescent Current (IDQ) | — | 750 mA |
| Output Power (Pout, Avg.) | — | 24 W (W-CDMA) |
| Power Gain (Gp) | — | 18 dB |
| Drain Efficiency | — | 32 % at 24 W Avg. |
| ACPR @ 5 MHz Offset | — | -38 dBc in 3.84 MHz channel |
| Device Output Signal PAR | — | 6.2 dB @ 0.01 % CCDF |
| 安裝類型 | — | Surface Mount / Screw Mount |
| RoHS 狀態 | — | Compliant |
| Configuration | — | Single, Push-Pull |