MRF8S18120HSR3 vs MRF8S21100HSR3 比較
詳細並排比較 MRF8S18120HSR3 由 NXP Semiconductors 與 MRF8S21100HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF8S18120HSR3 | MRF8S21100HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors | — |
| Part Number | MRF8S18120HSR3 | — |
| 電晶體類型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (Max) | 65 V | — |
| Test Drain Voltage | 28 V | — |
| Test Quiescent Current (IDQ) | 800 mA | — |
| Operating Frequency | 1805 MHz to 1880 MHz | — |
| Center Frequency | 1.81 GHz | — |
| Output Power (CW) | 72 W | — |
| Power Gain (Typ) | 18.2 dB | — |
| Drain Current (Test) | 800 mA | — |
| Package Type | NI-780S | — |
| 安裝方式 | Surface Mount (ceramic flange) | — |
| Operating Class | Class AB / Class C | Class AB or Class C |
| Application | GSM / GSM EDGE cellular base station power amplifiers | W-CDMA, LTE base-station power amplifiers |
| RoHS 狀態 | Compliant | Compliant (per NXP product family) |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| 封裝 / 外殼 | — | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Configuration | — | Single, push-pull N/A |
| 安裝類型 | — | Chassis / flange mount, screw-down |
| Lead-Free | — | Yes |