MRFE6S9160HR3 vs MRF6S9160HSR3 比較
詳細並排比較 MRFE6S9160HR3 由 NXP Semiconductors 與 MRF6S9160HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ 最後購買機會規格比較
| 參數 | MRFE6S9160HR3 | MRF6S9160HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 最後購買 |
| Manufacturer | NXP Semiconductors | — |
| 電晶體類型 | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV6E lateral MOSFET (LDMOS-like) | — |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | 31% typical at 880 MHz |
| 封裝 / 外殼 | NI-780H-2L (ceramic/metal air-cavity flange-mount) | — |
| 安裝類型 | Chassis / Flange mount (through-hole RF leads) | Flange / Chassis Mount with screw holes |
| 工作溫度範圍 | -40C to +150C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等級 | Not applicable (non-SMD air-cavity package) | — |
| Application | — | RF Power Amplifier |
| Operating Frequency | — | 865 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| Power Gain | — | 20.9 dB typical at 880 MHz |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| 封裝 | — | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |