MT29F1G08ABAEAWP-IT:E vs MX30LF1G18AC-TI-T 比較

詳細並排比較 MT29F1G08ABAEAWP-IT:E 由 Micron Technology 與 MX30LF1G18AC-TI-T 由 Macronix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
MT29F1G08ABAEAWP-IT:E MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron

MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron

MT29F1G08ABAEAWP-IT:E ✓ 啟用中
Macronix
MX30LF1G18AC-TI-T MX30LF1G18AC-TI-T - 1Gbit 3V SLC NAND Flash, TSOP-48 | Macronix

MX30LF1G18AC-TI-T - 1Gbit 3V SLC NAND Flash, TSOP-48 | Macronix

MX30LF1G18AC-TI-T ✓ 啟用中

規格比較

參數 MT29F1G08ABAEAWP-IT:E MX30LF1G18AC-TI-T
品牌 Micron Technology Macronix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體容量 1 Gbit (128 MB) —
組織 128M x 8 128M x 8 bit
介面 Parallel Asynchronous Parallel
供應電壓 3.3 V —
Access Time 25 ns 20 ns
Page Size 2048 bytes + 64 bytes spare 1 K + 64 bytes (data + spare)
Block Size 128 KB —
Program Time 200 us (typical) —
Erase Time 2 ms (typical) —
Endurance 100K program/erase cycles [DATA_NEEDED: P/E cycle endurance spec]
Data Retention 10 years —
工作溫度 -40C to +85C -40C to +85C (industrial)
封裝 TSOP-48 48-pin TSOP-I (Type I)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant —
記憶體類型 — Non-volatile NAND Flash (SLC)
Density — 1 Gbit (128 M x 8)
VCC Supply — 2.7 V to 3.6 V
ECC Requirement — 4-bit ECC per 512 bytes
Block Protection — Hardware PT pin, active high at power-on, internal weak pull-down
ONFI Compliance — ONFI 1.0
Compliance — RoHS compliant

資料表與資源

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