MT29F4G01ABBFD12-IT vs MT29F4G01ABBFD12-AUT:F 比較
詳細並排比較 MT29F4G01ABBFD12-IT 由 Micron Technology 與 MT29F4G01ABBFD12-AUT:F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT29F4G01ABBFD12-IT - 4Gb 1.8V SPI NAND SLC Flash | Micron
MT29F4G01ABBFD12-IT ✓ 啟用中Micron Technology
MT29F4G01ABBFD12-AUT:F - 4Gbit SLC SPI NAND Flash | Micron
MT29F4G01ABBFD12-AUT:F ✓ 啟用中規格比較
| 參數 | MT29F4G01ABBFD12-IT | MT29F4G01ABBFD12-AUT:F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | FLASH - NAND (SLC), Non-Volatile | FLASH - NAND (SLC) Memory IC |
| Density | 4 Gbit (4G x 1) | — |
| Memory Organization | 4096 + 256 bytes per page (4352 bytes total) | — |
| 介面 | SPI (x1, x2, x4 quad-I/O) | SPI |
| Maximum SPI Clock | 83 MHz | — |
| Supply Voltage (VCC) | 1.7 V to 1.95 V (1.8 V typical) | — |
| 封裝 | 24-ball T-PBGA (6x8 mm) | TBGA (63-ball, per Micron serial NAND family) |
| 工作溫度 | -40 C to +85 C (Industrial) | [DATA_NEEDED: temperature range] |
| Cell Technology | Single-Level Cell (SLC) | — |
| Page Size | 4352 bytes (4096 data + 256 spare) | [DATA_NEEDED: page size] |
| Block Size | 256 KiB (typical, 64 pages per block) | [DATA_NEEDED: block size] |
| On-die ECC | Supported (host-assisted external ECC typical) | — |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| MSL 等級 | 3 (per JEDEC J-STD-020, [DATA_NEEDED: exact floor life]) | [DATA_NEEDED: moisture sensitivity level] |
| RoHS 狀態 | Compliant | Compliant (lead-free :F suffix) |
| 記憶體容量 | — | 4 Gbit (512 MB) |
| Cell Type | — | SLC (Single-Level Cell) |
| Automotive Qualification | — | AUT grade, :F automotive suffix |
| 供應電壓 | — | [DATA_NEEDED: VCC range] |
| Max Clock Frequency | — | [DATA_NEEDED: SPI clock frequency] |
| On-Die ECC | — | Yes (ECD feature of serial NAND family) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |