MT40A1G8AG-062E vs H5AN8G8NAFR-UHC 比較

詳細並排比較 MT40A1G8AG-062E 由 Micron Technology 與 H5AN8G8NAFR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ 啟用中
SK hynix
H5AN8G8NAFR-UHC H5AN8G8NAFR-UHC - 8Gb DDR4 SDRAM 2400Mbps | SK Hynix

H5AN8G8NAFR-UHC - 8Gb DDR4 SDRAM 2400Mbps | SK Hynix

H5AN8G8NAFR-UHC ✓ 啟用中

規格比較

參數 MT40A1G8AG-062E H5AN8G8NAFR-UHC
品牌 Micron Technology SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
記憶體容量 8 Gbit —
組織 1G x 8 1G x 8
介面 Parallel CMOS, synchronous
Clock Frequency 1.6 GHz (DDR4-3200, 3200 MT/s data rate) —
Clock Cycle Time 19 ns class (-062E speed grade) —
Supply Voltage (VDD) 1.2 V 1.2 V (DDR4 standard)
封裝 78-FBGA (7.5 x 11 mm) FBGA-78 (PBGA78)
安裝類型 Surface Mount (BGA) Surface Mount
Temperature Grade Automotive (AUT) —
Access Time (CAS Latency class) DDR4-3200 timing class (tAA per datasheet) —
Bank Group Architecture Yes (DDR4 bank groups) —
Termination On-Die Termination (ODT) —
CA Parity Supported (DDR4 command/address parity) —
Packaging Option Tape and Reel (TR / :R suffix) —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant (Lead-Free & Halogen-Free)
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Refresh Rate [DATA_NEEDED: refresh rate] —
Density — 8 Gbit
資料速率 — 2400 Mbps/pin (PC2400)
Family — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Speed Grade Suffix — UHC
Application Class — Main memory (high density, high bandwidth)
工作溫度 — [DATA_NEEDED: Operating Temperature]
CAS Latency (CL) — [DATA_NEEDED: CAS Latency]
Refresh — [DATA_NEEDED: Refresh specification]
MSL 等級 — [DATA_NEEDED: MSL Level]

資料表與資源

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