MT40A1G8AG-062E vs H5AN8G8NAFR-UHC 对比

详细并排对比 MT40A1G8AG-062E 出自 Micron Technology 和 H5AN8G8NAFR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ 量产中
SK hynix
H5AN8G8NAFR-UHC H5AN8G8NAFR-UHC - 8Gb DDR4 SDRAM 2400Mbps | SK Hynix

H5AN8G8NAFR-UHC - 8Gb DDR4 SDRAM 2400Mbps | SK Hynix

H5AN8G8NAFR-UHC ✓ 量产中

规格对比

参数 MT40A1G8AG-062E H5AN8G8NAFR-UHC
品牌 Micron Technology SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.10 $0.00
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 8 Gbit —
存储组织 1G x 8 1G x 8
接口 Parallel CMOS, synchronous
Clock Frequency 1.6 GHz (DDR4-3200, 3200 MT/s data rate) —
Clock Cycle Time 19 ns class (-062E speed grade) —
Supply Voltage (VDD) 1.2 V 1.2 V (DDR4 standard)
封装 78-FBGA (7.5 x 11 mm) FBGA-78 (PBGA78)
安装类型 Surface Mount (BGA) Surface Mount
Temperature Grade Automotive (AUT) —
Access Time (CAS Latency class) DDR4-3200 timing class (tAA per datasheet) —
Bank Group Architecture Yes (DDR4 bank groups) —
Termination On-Die Termination (ODT) —
CA Parity Supported (DDR4 command/address parity) —
Packaging Option Tape and Reel (TR / :R suffix) —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (Lead-Free & Halogen-Free)
工作温度范围 [DATA_NEEDED: operating temperature range] —
Refresh Rate [DATA_NEEDED: refresh rate] —
Density — 8 Gbit
数据速率 — 2400 Mbps/pin (PC2400)
Family — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Speed Grade Suffix — UHC
Application Class — Main memory (high density, high bandwidth)
工作温度 — [DATA_NEEDED: Operating Temperature]
CAS Latency (CL) — [DATA_NEEDED: CAS Latency]
Refresh — [DATA_NEEDED: Refresh specification]
MSL 等级 — [DATA_NEEDED: MSL Level]

数据手册与资源

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