MT40A1G8SA-075:E vs H5AN8G6NDJR-XNC 比較
詳細並排比較 MT40A1G8SA-075:E 由 Micron Technology 與 H5AN8G6NDJR-XNC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A1G8SA-075:E | H5AN8G6NDJR-XNC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $55.68 |
| 記憶體類型 | SDRAM - DDR4 | DDR4 SDRAM |
| 記憶體容量 | 8Gbit (1G x 8) | 8 Gb |
| 介面 | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| 資料速率 | 2666 MT/s | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| 工作溫度範圍 | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| 封裝 | 78-FBGA (7.5x11 mm) | FBGA-96 (13x7.5 mm) |
| 安裝類型 | Surface Mount | — |
| Write Leveling | Supported | Yes |
| Dynamic On-Chip Termination | Supported | Yes |
| CRC Function | Supported | Yes |
| Data Mask Function | Supported | — |
| RoHS 狀態 | Compliant | — |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| ZQ Calibration | — | Yes |
| Asynchronous Reset | — | Yes |