MT40A512M16LY-062E AAT:E vs K4A8G165WG-BCWE 比較
詳細並排比較 MT40A512M16LY-062E AAT:E 由 Micron Technology 與 K4A8G165WG-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron
MT40A512M16LY-062E AAT:E ✓ 啟用中
規格比較
| 參數 | MT40A512M16LY-062E AAT:E | K4A8G165WG-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $35.98 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (Volatile DRAM) |
| 記憶體容量 | 8 Gbit (1 GB) | 8 Gbit |
| Memory Organization | 512M x 16 | 512M x 16 |
| 介面 | Parallel | Parallel |
| Clock Frequency | 1.6 GHz | — |
| Access Time | 19 ns | — |
| 供應電壓 | 1.2 V | 1.2 V |
| Speed Grade | 062E | — |
| 封裝 | 96-FBGA (7.5 x 13.5 mm) | FBGA-96 (BGA-96), surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | 0C to +85C (commercial) |
| Package Height | [DATA_NEEDED: package max height] | — |
| MSL Rating | [DATA_NEEDED: moisture sensitivity level] | — |
| Ordering Code Suffix | AAT:E (temperature/package option per Micron code) | — |
| RoHS 狀態 | Compliant | Compliant |
| Moisture Packaging | [DATA_NEEDED: packing type for AAT:E suffix] | — |
| Data Rate Class | DDR4-3200 (062E speed bin) | — |
| Max Data Rate | — | 3200 Mbps/pin |
| Clock Cycle Time | — | 19 ns |
| Refresh | — | Auto/self refresh per DDR4 standard |
| Manufacturer | — | Samsung Semiconductor, Inc. |
| Product Status | — | Active |
| Typical Standby Current | — | 20 mA (per LCSC listing) |
| Die Generation | — | Samsung B-die, 8Gb DDR4 x16 |