MT40A512M8RH-075E:B vs K3LK4L40DM-BGCT 比較
詳細並排比較 MT40A512M8RH-075E:B 由 Micron Technology 與 K3LK4L40DM-BGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 啟用中規格比較
| 參數 | MT40A512M8RH-075E:B | K3LK4L40DM-BGCT |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DRAM (SDRAM component) |
| Density | 4 Gbit | [DATA_NEEDED: Density] |
| 組織 | 512M x 8 | — |
| 資料速率 | 2666 MT/s (DDR4-2666) | [DATA_NEEDED: Data Rate] |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| 介面類型 | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| 參考電壓 | On-die internal adjustable VREFDQ generation | — |
| 封裝 | 78-FBGA (9 x 10.5 mm), TFBGA | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range (standard grade)] | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | — |
| Speed Grade Suffix | -075E | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Manufacturer | — | Samsung Electronics |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| MSL 等級 | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |