MT42L16M32D1HE-18 vs MT42L32M32D1HE-18 IT:D 比較

詳細並排比較 MT42L16M32D1HE-18 由 Micron Technology 與 MT42L32M32D1HE-18 IT:D 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
MT42L16M32D1HE-18 MT42L16M32D1HE-18 - 512Mb LPDDR2 SDRAM 134-VFBGA | Micron

MT42L16M32D1HE-18 - 512Mb LPDDR2 SDRAM 134-VFBGA | Micron

MT42L16M32D1HE-18 ✓ 啟用中
Micron Technology
MT42L32M32D1HE-18 IT:D MT42L32M32D1HE-18 - 1Gbit LPDDR2 SDRAM 533MHz | Micron

MT42L32M32D1HE-18 - 1Gbit LPDDR2 SDRAM 533MHz | Micron

MT42L32M32D1HE-18 IT:D ✓ 啟用中

規格比較

參數 MT42L16M32D1HE-18 MT42L32M32D1HE-18 IT:D
品牌 Micron Technology Micron Technology
類別 DRAM Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 Mobile LPDDR2 SDRAM Mobile LPDDR2 SDRAM
Density 512 Mbit —
組織 16M x 32 32M x 32
Clock Frequency 533 MHz —
資料速率 1066 MT/s (DDR) —
Supply Voltage VDD 1.2 V —
Supply Voltage VDDQ 1.2 V —
介面 Parallel, LPDDR2 CA bus Parallel
封裝 134-VFBGA (10 x 11.5 mm) 134-VFBGA (10 x 11.5 mm)
安裝類型 Surface Mount Surface Mount
Operating Temperature (IT:E) -40C to +85C —
Operating Temperature (AAT:E) -40C to +105C —
Speed Grade -18 —
Low-Power Modes Self-refresh, power-down, deep power-down, clock stop —
Automotive Qualification (AAT:E variant) AEC-Q100 —
RoHS 狀態 Compliant Compliant (D suffix = lead-free)
Technology LPDRAM —
記憶體容量 — 1 Gbit
Clock / Data Rate — 533 MHz
Core Supply Voltage (VDD1) — 1.2 V
I/O Supply Voltage (VDD2) — 1.8 V
Temperature Grade — IT (industrial)
工作溫度 — [DATA_NEEDED: exact min/max operating temperature range]
AEC-Q100 — Qualified on AAT automotive variants
Access Type — Synchronous, JEDEC LPDDR2-S4 protocol
Refresh — Self-refresh supported
Packaging Option — Tray or Tape & Reel (TR)

資料表與資源

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