MT53B128M32D1NP-062 vs MT53B128M32D1DS-053 AUT:A 比較

詳細並排比較 MT53B128M32D1NP-062 由 Micron Technology 與 MT53B128M32D1DS-053 AUT:A 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
MT53B128M32D1NP-062 MT53B128M32D1NP-062 - 4Gbit LPDDR4 SDRAM 1.6GHz | Micron

MT53B128M32D1NP-062 - 4Gbit LPDDR4 SDRAM 1.6GHz | Micron

MT53B128M32D1NP-062 ✓ 啟用中
Micron Technology
MT53B128M32D1DS-053 AUT:A MT53B128M32D1DS-053 AUT:A - 4Gbit LPDDR4 1.866GHz | Micron

MT53B128M32D1DS-053 AUT:A - 4Gbit LPDDR4 1.866GHz | Micron

MT53B128M32D1DS-053 AUT:A ✓ 啟用中

規格比較

參數 MT53B128M32D1NP-062 MT53B128M32D1DS-053 AUT:A
品牌 Micron Technology Micron Technology
類別 Memory ICs DRAM
生命週期狀態 啟用中 啟用中
記憶體類型 Mobile LPDDR4 SDRAM SDRAM - Mobile LPDDR4
Density 4 Gbit —
組織 128M x 32 —
Clock Frequency 1.6 GHz 1.866 GHz
Supply Voltage (VDD) 1.1 V —
封裝 200-WFBGA (10 x 14.5 mm) 200-WFBGA (10 mm x 14.5 mm)
安裝類型 Surface Mount Surface Mount
介面 JEDEC LPDDR4 Parallel
Speed Grade -062 -053 (1866 MHz)
Operating Temperature (AUT:A variant) -40C to +125C (TC) —
Operating Temperature (AAT:A variant) -40C to +105C (TC) —
Automotive Qualification (AUT:A variant) AEC-Q100 —
Packaging Tape & Reel (TR variants) —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等級 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Data Rate Class [DATA_NEEDED: MT/s data rate] —
記憶體容量 — 4 Gbit
Memory Organization — 128M x 32
Access Time (Clock Cycle) — 3.5 ns
Supply Voltage (VDD/VDDQ) — 1.1 V
工作溫度 — -40C to +125C
Grade — Automotive (AUT, AEC-Q100)
Memory Format — DRAM (volatile)
Feature — Ultra-low power consumption for enhanced battery life
Packaging Option — Tape & Reel (TR suffix variant)

資料表與資源

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