MT53E2G32D4DE-046 AUT:C vs MT53E2G32D4DE-046 比較
詳細並排比較 MT53E2G32D4DE-046 AUT:C 由 Micron Technology 與 MT53E2G32D4DE-046 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT53E2G32D4DE-046 AUT:C - 64Gbit LPDDR4X DRAM | Micron
MT53E2G32D4DE-046 AUT:C ✓ 啟用中規格比較
| 參數 | MT53E2G32D4DE-046 AUT:C | MT53E2G32D4DE-046 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SDRAM - Mobile LPDDR4X | Mobile LPDDR4X SDRAM |
| 記憶體容量 | 64 Gbit | 64 Gbit (8 GB) |
| 組織 | 2G x 32 | 2G x 32 |
| 介面 | Parallel | Parallel |
| Clock Frequency | 2.133 GHz | 2133 MHz (2.133 GHz) |
| Access Time | 3.5 ns | — |
| 封裝 | 200-TFBGA (10 x 14.5 mm) | 200-TFBGA (10 x 14.5 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Bus Width | 32 bit | — |
| Grade | Automotive (AUT) | — |
| Die Revision | C | — |
| Supply Voltage VDD | [DATA_NEEDED: VDD voltage] | — |
| Supply Voltage VDDQ | [DATA_NEEDED: VDDQ voltage] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| Standby Current | [DATA_NEEDED: standby current] | 2 mA |
| Packaging | [DATA_NEEDED: tray/reel quantity] | — |
| RoHS 狀態 | Compliant | Compliant |
| Access Time (Cycle) | — | 3.5 ns |
| 資料速率 | — | 4266 MT/s max class (-046 speed bin per LPDDR4X interface) |
| Supply Voltage (VDD) | — | 1.06 V to 1.17 V |
| Operating Current (Idd) | — | 168 mA |
| Operating Temperature (WT grade) | — | -25C to +85C |
| Operating Temperature (AUT grade) | — | -40C to +125C |
| Operating Temperature (AIT grade) | — | -40C to +95C |
| 功能特色 | — | Auto precharge, auto self-refresh, ZQ calibration, built-in temperature sensor, write leveling, data mask, asynchronous reset |