MT53E512M32D2FW-046 AAT:D vs MT53E1G32D2FW-046 比較
詳細並排比較 MT53E512M32D2FW-046 AAT:D 由 Micron Technology 與 MT53E1G32D2FW-046 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT53E512M32D2FW-046 - 16Gb LPDDR4 SDRAM 2133MHz | Micron
MT53E512M32D2FW-046 AAT:D ✓ 啟用中Micron Technology
MT53E1G32D2FW-046 - 32Gbit LPDDR4X SDRAM 200-TFBGA | Micron
MT53E1G32D2FW-046 ✓ 啟用中規格比較
| 參數 | MT53E512M32D2FW-046 AAT:D | MT53E1G32D2FW-046 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SDRAM - Mobile LPDDR4/LPDDR4X | Mobile LPDDR4X SDRAM |
| 記憶體容量 | 16 Gbit | 32 Gbit (4 GB) |
| 組織 | 512M x 32 | 1G x 32 (dual-die, 2 x 16-bit channels) |
| 介面 | Parallel | Parallel |
| Clock Frequency | 2133 MHz (2.133 GHz) | 2133 MHz (2.133 GHz) |
| Cycle Time | 3.5 ns | — |
| Supply Voltage VDD | 1.1 V | — |
| Supply Voltage VDDQ (LPDDR4) | 1.1 V | — |
| Supply Voltage VDDQ (LPDDR4X) | 0.6 V | — |
| Core Voltage VDD2 | 1.8 V | — |
| 工作溫度 | -40C to +105C (AAT:D grade) | — |
| 封裝 | 200-TFBGA (10 mm x 14.5 mm) | 200-TFBGA (10 x 14.5 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 (AUT:D variant verified; AAT:D automotive grade per Micron catalog) | — |
| Memory Configuration Speed Grade | -046 (2133) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| 資料速率 | — | 4266 Mb/s per pin |
| Access Time | — | 3.5 ns |
| Write Cycle Time | — | 18 ns |
| VDDQ I/O Voltage | — | 0.6 V |
| Ball Diameter | — | 0.40 mm (SMD balls) |
| Operating Temperature (AUT variant) | — | -40C to +125C |
| Die Revisions | — | :A (FBGA D9ZQX) and :B (FBGA D8CJB) |
| 功能特色 | — | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration |
| MSL Rating | — | [DATA_NEEDED: moisture sensitivity level] |