MW7IC2040NR1 vs MW7IC2220NBR1 比較
詳細並排比較 MW7IC2040NR1 由 NXP Semiconductors 與 MW7IC2220NBR1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ 啟用中規格比較
| 參數 | MW7IC2040NR1 | MW7IC2220NBR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | RF Amplifiers | RF Amplifiers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | RF LDMOS (Laterally Diffused MOSFET) |
| RF Type | General Purpose / Wideband Integrated Power Amplifier | — |
| 功能 | Two-stage integrated power amplifier with on-chip matching | W-CDMA Wideband Integrated Power Amplifier |
| Frequency Range (Application) | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) | — |
| Frequency Range (Characterization) | 100 MHz to 1 GHz | — |
| Supply Voltage (Vdd) | 24 V to 32 V (nominal 28 V) | — |
| Maximum Supply Voltage | 32 V | — |
| Quiescent Supply Current (Idq) | 75 mA | — |
| Small-Signal Gain | 23.5 dB | 31 dB (typical at 2.17 GHz) |
| Output Power (avg, W-CDMA) | 4 W (typical at rated operating conditions) | — |
| Modulation Compatibility | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats | — |
| 封裝 / 外殼 | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount | — |
| 腳位數 | 16 | — |
| Operating Mode | Class-AB (multi-stage, externally biased) | — |
| Lead Configuration | Flat leads (surface-mount) | — |
| 安裝類型 | Surface Mount (PCB solderable with bottom drain ground plane) | Surface Mount (flange/over-molded) |
| 工作溫度 | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) | — |
| Packaging Type | Tape & Reel (per part suffix NR1 suffix convention) | — |
| RoHS 狀態 | Compliant (per NXP product family) | — |
| Frequency Range | — | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Quiescent Current Stage 1 (IDQ1) | — | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | — | 300 mA |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Modulation Support | — | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |