MX30LF1G18AC-TI-T vs MT29F1G08ABAEAWP-IT:E 比較
詳細並排比較 MX30LF1G18AC-TI-T 由 Macronix 與 MT29F1G08ABAEAWP-IT:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MX30LF1G18AC-TI-T | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| 品牌 | Macronix | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Non-volatile NAND Flash (SLC) | — |
| Density | 1 Gbit (128 M x 8) | — |
| 組織 | 128M x 8 bit | 128M x 8 |
| 介面 | Asynchronous Parallel | Parallel |
| Access Time | 20 ns | 25 ns |
| VCC Supply | 2.7 V to 3.6 V | — |
| ECC Requirement | 4-bit ECC per 512 bytes | — |
| Page Size | 1 K + 64 bytes (data + spare) | 2048 bytes + 64 bytes spare |
| Block Protection | Hardware PT pin, active high at power-on, internal weak pull-down | — |
| ONFI Compliance | ONFI 1.0 | — |
| 封裝 | 48-pin TSOP-I (Type I) | TSOP-48 |
| 工作溫度 | -40C to +85C (industrial) | -40C to +85C |
| 安裝類型 | Surface Mount | Surface Mount |
| Compliance | RoHS compliant | — |
| Endurance | [DATA_NEEDED: P/E cycle endurance spec] | 100K program/erase cycles |
| 記憶體容量 | — | 1 Gbit (128 MB) |
| 供應電壓 | — | 3.3 V |
| Block Size | — | 128 KB |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Data Retention | — | 10 years |
| RoHS 狀態 | — | Compliant |