NT5AD512M16C4-JRU vs MT40A512M16AD-062E 比較
詳細並排比較 NT5AD512M16C4-JRU 由 Nanya Technology 與 MT40A512M16AD-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ 啟用中Micron Technology
MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron
MT40A512M16AD-062E ✓ 啟用中規格比較
| 參數 | NT5AD512M16C4-JRU | MT40A512M16AD-062E |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $83.00 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 組織 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1600 MHz (3200 Mbps data rate) | 1.6 GHz |
| CAS Latency (CL) | 22 at 1600 MHz | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封裝 | 96-ball FBGA (PBGA96) | 96-FBGA (7.5 mm x 13.5 mm) |
| 工作溫度 | -40 C to +95 C (industrial grade) | [DATA_NEEDED: operating temperature range] |
| 介面 | CMOS, DDR4 | Parallel (POD) |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Green Product (per Nanya product page) | [DATA_NEEDED: RoHS status] |
| 記憶體容量 | — | 8 Gbit |
| Access Time (Row Cycle) | — | 19 ns |
| Automotive Qualification | — | AUT:E (automotive variant) |
| Speed Grade | — | -062E |
| 供應電壓 | — | [DATA_NEEDED: core supply voltage (VDD)] |
| Prefetch Architecture | — | 8n with bank groups |
| HS Code (USHTS) | — | 8542320071 |
| Standard Pack Quantity | — | [DATA_NEEDED: reel quantity] |