NT5AD512M16C4-JRU vs MT40A512M16TD-062E AUT:R 比較
詳細並排比較 NT5AD512M16C4-JRU 由 Nanya Technology 與 MT40A512M16TD-062E AUT:R 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ 啟用中Micron Technology
MT40A512M16TD-062E AUT:R - 8Gbit DDR4 SDRAM | Micron
MT40A512M16TD-062E AUT:R ✓ 啟用中規格比較
| 參數 | NT5AD512M16C4-JRU | MT40A512M16TD-062E AUT:R |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $83.00 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 組織 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1600 MHz (3200 Mbps data rate) | — |
| CAS Latency (CL) | 22 at 1600 MHz | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封裝 | 96-ball FBGA (PBGA96) | 96-FBGA (7.5 x 13 mm) |
| 工作溫度 | -40 C to +95 C (industrial grade) | — |
| 介面 | CMOS, DDR4 | Parallel |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Green Product (per Nanya product page) | — |
| 記憶體容量 | — | 8 Gbit |
| Clock Frequency / Data Rate | — | 1.6 GHz |
| Access Time | — | 19 ns |
| 供應電壓 | — | 1.2 V |
| Automotive Qualification | — | AEC-Q100 (AUT grade) |
| Packaging Suffix | — | -R (Tape & Reel) |
| Speed Grade | — | -062E |
| Technology Family | — | DDR4 SDRAM (SDR/DDR family) |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | — | [DATA_NEEDED: refresh interval spec] |