RTAX2000D-CQ352E vs RTAX2000DL-1CQ352E 比較
詳細並排比較 RTAX2000D-CQ352E 由 Microchip Technology 與 RTAX2000DL-1CQ352E 由 Microchip Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Microchip Technology
RTAX2000D-CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip
RTAX2000D-CQ352E ✓ 啟用中Microchip Technology
RTAX2000DL-1CQ352E - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352E ✓ 啟用中規格比較
| 參數 | RTAX2000D-CQ352E | RTAX2000DL-1CQ352E |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | RTAX-DSP / RTAX-SL radiation-tolerant FPGAs |
| Equivalent System Gates | 2000000 gates | 2000000 gates |
| Logic Cells | 29568 cells | 29568 |
| CLB Organization | 19712 CLBs | — |
| 最大時脈頻率 | 649 MHz | — |
| Number of Inputs | 166 | — |
| 輸出數量 | 166 | — |
| Technology | Digital CMOS, antifuse programmable | Digital CMOS, antifuse (nonvolatile, one-time programmable) |
| 封裝 | CQFP-352 (352-terminal ceramic quad flat pack) | 352-terminal CQFP (Ceramic Quad Flat Pack), column E lead finish |
| 安裝類型 | Surface Mount | Surface Mount |
| Screening | MIL-STD-883 Class (per distributor data) | — |
| Program Type | One-time programmable (antifuse) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| System Features | Segmentable clocks, chip-wide highway routing, carry logic | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| 供應電壓 | [DATA_NEEDED: core supply voltage] | — |
| Radiation Tolerance (TID) | [DATA_NEEDED: total ionizing dose rating] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Configurable Logic Blocks (CLBs) | — | 19712 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz 18-bit x 18-bit multiply-accumulate |
| Core Supply Voltage | — | 1.5 V nominal (1.425 V to 1.575 V) |
| Total Ionizing Dose (Functional) | — | 300 krad(Si) |
| Total Ionizing Dose (Parametric rating) | — | 200 krad(Si) |
| User I/O | — | 166 input and 166 output terminals |
| Configuration | — | Live at power-up, no external configuration device |
| Speed Grade | — | -1 (standard) |