UCC21530Q-Q1 vs UCC21550 比較

詳細並排比較 UCC21530Q-Q1 由 Texas Instruments 與 UCC21550 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
UCC21530Q-Q1 UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 ✓ 啟用中
Texas Instruments
UCC21550 UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 ✓ 啟用中

規格比較

參數 UCC21530Q-Q1 UCC21550
品牌 Texas Instruments Texas Instruments
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Output Peak Current (Source) 4 A —
Output Peak Current (Sink) 6 A —
Isolation Rating 5.7 kVRMS (reinforced) 5000 Vrms (reinforced, UL1577)
Channel-to-Channel Spacing 3.3 mm —
CMTI (Common-Mode Transient Immunity) 125 V/ns (minimum) —
Maximum Switching Frequency 5 MHz —
Number of Channels 2 —
Configuration Low-side, high-side, half-bridge, dual low-side —
Dead Time Programmable via DT pin resistor Programmable via DT pin resistor
致能腳位 Yes —
Input Threshold TTL and CMOS compatible —
Driven Device Types IGBT, Si MOSFET, SiC MOSFET —
Qualification AEC-Q100 (automotive) —
封裝 SOIC-14 (DWK) 16-SOIC (DW, 300 mil)
安裝類型 Surface Mount Surface Mount
Supply Voltage VDDI [DATA_NEEDED: VDDI range] —
工作溫度 [DATA_NEEDED: temperature range] -40C to +150C
RoHS 狀態 Compliant Compliant
通道數 — 2 (dual-channel)
Peak Source Current — 4 A
Peak Sink Current — 6 A
Isolation Technology — Capacitive (silicon dioxide)
Configurations — Dual low-side, dual high-side, or half-bridge
Supported Transistors — MOSFET, SiC, GaN, IGBT
UVLO — Yes, on input and output supplies (A/B/C grade options)
Automotive Qualification — UCC21550x-Q1 family AEC-Q100 qualified
CMTI — [DATA_NEEDED: common-mode transient immunity]
Propagation Delay — [DATA_NEEDED: typical propagation delay]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價