UCC21710-Q1 vs UCC21732-Q1 比較

詳細並排比較 UCC21710-Q1 由 Texas Instruments 與 UCC21732-Q1 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
UCC21710-Q1 UCC21710-Q1 - 10A Isolated Gate Driver | Texas Instruments

UCC21710-Q1 - 10A Isolated Gate Driver | Texas Instruments

UCC21710-Q1 ✓ 啟用中
Texas Instruments
UCC21732-Q1 UCC21732-Q1 - ±10A Isolated SiC/IGBT Gate Driver | TI

UCC21732-Q1 - ±10A Isolated SiC/IGBT Gate Driver | TI

UCC21732-Q1 ✓ 啟用中

規格比較

參數 UCC21710-Q1 UCC21732-Q1
品牌 Texas Instruments Texas Instruments
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Output Current ±10 A (peak source/sink) —
Isolation Voltage 5700 Vrms (reinforced) —
Number of Channels 1 1
封裝 16-SOIC (D) 16-SOIC (DW) wide-body
Switching Voltage Up to 1700 V (SiC/IGBT) —
Technology Capacitive Coupling —
Automotive Grade Yes (AEC-Q100) —
Input Type Digital —
Propagation Delay [DATA_NEEDED: propagation delay] [DATA_NEEDED: typical propagation delay]
CMTI [DATA_NEEDED: common-mode transient immunity] —
Supply Voltage (VDD) [DATA_NEEDED: input supply voltage range] —
Output Voltage (VDD-VEE) [DATA_NEEDED: output supply voltage range] —
工作溫度 [DATA_NEEDED: operating temperature range] —
Fault Response Time [DATA_NEEDED: overcurrent/short circuit detection time] —
安裝類型 Surface Mount —
功能 — Galvanic isolated single-channel gate driver
Target Switches — SiC MOSFET, IGBT
Maximum DC Operating Voltage — 2121 V
Peak Source Current — +10 A
Peak Sink Current — -10 A
Isolation Voltage (RMS) — 5.7 kV
Surge Immunity — 12.8 kV PK
Common-Mode Transient Immunity (CMTI) — >150 V/ns
Isolation Technology — SiO2 capacitive
Part-to-Part Skew — Low (per datasheet)
Soft Turn-Off (STO) Current — 900 mA
工作溫度範圍 — -40 C to +125 C
Qualification — AEC-Q100 automotive
Protection Features — DESAT, 2-level turn-off, UVLO (VCC/VDD), fault flag
Analog Sense Input — AIN pin for temperature/voltage monitoring
RoHS 狀態 — Compliant
Lead-Free — Yes

資料表與資源

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