UCC27322DGN+UCC27322DGNR vs UCC27322DGNR 比較
詳細並排比較 UCC27322DGN+UCC27322DGNR 由 Texas Instruments 與 UCC27322DGNR 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Texas Instruments
UCC27322DGN/DGNR - 9A Single LS MOSFET Driver w/ Enable | TI
UCC27322DGN+UCC27322DGNR ✓ 啟用中Texas Instruments
UCC27322DGNR - 9A Single Low-Side MOSFET Driver | Texas Instruments
UCC27322DGNR ✓ 啟用中規格比較
| 參數 | UCC27322DGN+UCC27322DGNR | UCC27322DGNR |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Driver Type | Single-channel low-side MOSFET/IGBT gate driver | — |
| Number of Channels | 1 | 1 |
| Peak Output Current | 9 A source / 9 A sink | — |
| 輸出配置 | Split outputs (OUTH/OUTL) for independent turn-on/turn-off | Split outputs (OUTH source, OUTL sink) |
| Input Voltage (VCC) | 4 V to 15 V | — |
| UVLO Threshold | 4 V (typ) | — |
| Input Thresholds | TTL/CMOS compatible | — |
| 致能腳位 | Yes (active-high) | Yes (active-high) |
| Output Polarity | Non-inverting | — |
| 上升時間 | 20 ns (typ, 1.8 nF load) | — |
| 下降時間 | 20 ns (typ, 1.8 nF load) | — |
| Propagation Delay | [DATA_NEEDED: propagation delay] | — |
| 工作溫度 | -40 C to +105 C (DGN); -40 C to +125 C (Q1 variant) | -40 C to +105 C |
| 封裝 | 8-pin HVSSOP PowerPAD (DGN) 3.0 mm x 3.0 mm with exposed thermal pad | HVSSOP-8 (DGN) PowerPAD |
| 安裝類型 | Surface Mount | Surface Mount |
| Output Architecture | TrueDrive bipolar/CMOS hybrid | — |
| RoHS 狀態 | Compliant | Compliant |
| 功能 | — | Single low-side gate driver |
| Peak Source Current | — | 9 A |
| Peak Sink Current | — | 9 A |
| Supply Voltage (VDD) | — | 4 V to 15 V |
| Logic Input Type | — | Non-Inverting (TTL/CMOS) |
| VIL / VIH Thresholds | — | 1.1 V / 2.7 V |
| Rise Time (typical, 1.8 nF load) | — | 20 ns |
| Fall Time (typical, 1.8 nF load) | — | 20 ns |
| Propagation Delay (typ) | — | [DATA_NEEDED: propagation delay] |