BAP65-03,115 - RF PIN Diode 30V 100mA SOD-323 | NXP
MPN： BAP65-03,115 ✗ 停產BAP65-03,115 概覽
A PIN diode is a semiconductor device with a wide, lightly doped intrinsic layer sandwiched between P-type and N-type regions. At RF frequencies, its forward-biased resistance varies linearly with DC bias current, making it behave as a current-controlled RF resistor. This property places PIN diodes within the broader diode family alongside rectifier, Schottky, and varactor diodes, and makes them essential elements in RF front-end design for switching, attenuating, and phase-shifting signal paths.
Key features of the BAP65-03 include a very low diode capacitance of 0.9 pF, a low forward resistance of 0.35 ohm for minimal insertion loss, and very low series inductance due to the compact SOD-323 package. These parameters combine to give low loss and high isolation in RF switch circuits, and the planar construction supports the high breakdown voltage needed for demanding RF front ends.
Architecturally, the device uses NXP's planar silicon PIN process. The thick intrinsic layer yields a nearly constant series resistance across a wide current range and a sharp transition between the off-state (dominated by the 0.9 pF capacitance) and the on-state (dominated by the 0.35 ohm resistance), which is precisely the behavior required for SPDT and SPDT-cascaded antenna and filter switching networks.
Typical target applications include RF switch modules for wireless transceivers, antenna switching in cellular and ISM-band systems, RF attenuators, and protection or bypass switching in front-end modules. The AEC-Q101 qualification of the ,115 ordering code further supports automotive-connected RF subsystems.
A key design consideration is bias current: the RF resistance is set by the DC forward current, so the bias network must be stiff and filtered to prevent RF leakage into the control line. Note also that this part is flagged End-of-Life / not recommended for new designs by NXP.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替換替代品，適用於 BAP65-03,115 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： BAP65-03,115 （相同外形與佔位） — 差異在於 Lifecycle Status, Package, Reverse Voltage (VR), Series Inductance.
BAP64-03,115
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →BAP65-02,215
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
BAR63-03WE6327
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
BAP65-03,115 最大額定值與電氣特性
| Device Type | Silicon PIN diode (RF) |
| Diode Configuration | Single |
| Reverse Voltage (VR) | 30 V |
| Forward Current (IF) | 100 mA |
| Power Dissipation | 500 mW |
| Diode Capacitance (Cd) Max | 0.9 pF |
| Forward Resistance (Rs) | 0.35 ohm |
| Series Inductance | Very low (SOD-323 package) |
| 封裝 | SOD-323 (SC-76), 2-pin |
| Package Dimensions | 1.7 mm x 1.25 mm x 0.95 mm body |
| Pin Pitch | 1.3 mm |
| 安裝類型 | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Application | RF switches, RF attenuators, current-controlled RF resistor |
| Ordering Code Suffix | ,115 (standard product, Tape & Reel) |
| 生命週期狀態 | End of Life / Not recommended for new designs |
BAP65-03,115 腳位配置
| 腳位 1 | Anode — PIN diode anode - connect to RF path / bias current source |
| 腳位 2 | Cathode — PIN diode cathode - polarity band side of SOD-323 package |
典型應用
BAP65-03,115 適用於 6 應用s: RF Antenna Switching, RF Attenuators, Automotive RF Front-End Modules, Wireless Transceiver T/R Switching, RF Switch Modules for IoT and ISM Band, Test and Measurement RF Switching.
RF Antenna Switching
The BAP65-03,115 is purpose-built as a high-voltage, current-controlled RF resistor for antenna switch matrices in wireless transceivers. Its 0.9 pF maximum capacitance keeps off-state isolation high across cellular and ISM bands, while the 0.35 ohm on-resistance minimizes insertion loss in the transmit path. In a typical series-shunt SPDT configuration, the diode toggles between a low-loss conducting state under 10-100 mA bias and a near-open off state, with the 30 V breakdown providing headroom for high RF port voltages. The very low series inductance of the SOD-323 package preserves performance into the GHz range without additional layout compensation.
推薦
RF Attenuators
In PIN-diode voltage-variable attenuators, the BAP65-03,115's resistance varies smoothly with forward bias current, enabling continuously adjustable signal attenuation in IF and RF gain-control loops. Because the 0.35 ohm minimum resistance is very low, the same diode serves both the series arms (low-loss through state) and the shunt arms (attenuating state) of a balanced bridged-T or pi attenuator. AEC-Q101 qualification of the ,115 grade extends this use to automotive RF modules such as keyless entry and V2X receivers, where automatic gain control must remain monotonic and repeatable over the -40 to +125 C automotive temperature range.
推薦
Automotive RF Front-End Modules
The ,115 ordering code of BAP65-03 is qualified to AEC-Q101, making it suitable for automotive antenna switches, diversity switching, and transmit/receive switching in keyless-entry, TPMS, and telematics receivers. The 30 V reverse voltage and 500 mW dissipation rating provide robustness against antenna static discharge and elevated RF throughput, while the small 1.7 x 1.25 mm SOD-323 body fits the dense layouts of automotive RF front-end modules. Designers should note the End-of-Life status: for new automotive platforms, secure last-time-buy stock or qualify the BAP64-03 successor early in the program to avoid supply gaps.
推薦
Wireless Transceiver T/R Switching
In compact wireless transceivers, the BAP65-03,115 serves as the transmit/receive switch element between the power amplifier output and the low-noise receiver input. The 0.9 pF off-capacitance prevents transmit energy from leaking into the sensitive receiver chain, protecting the LNA and preserving receiver blocking performance, while the 0.35 ohm on-resistance keeps transmit insertion loss under control, directly improving battery efficiency at the PA output. Its very low package series inductance simplifies the 50-ohm matching layout, and the 100 mA forward current rating covers the bias needs of typical medium-power T/R designs.
推薦
RF Switch Modules for IoT and ISM Band
Sub-GHz and 2.4 GHz IoT devices in the ISM bands use PIN diode switches to share a single antenna between transmit and receive paths or between multiple radio chains. The BAP65-03,115's combination of 0.9 pF capacitance and 0.35 ohm resistance delivers the isolation-to-loss ratio needed for these battery-powered systems, and its 2-pin SOD-323 package keeps board area and cost minimal - distributor pricing starts around $0.084 as of September 2026. The 30 V rating gives margin for antenna-matching network voltage swings, and the AEC-Q101 grade provides extra reliability assurance for connected devices deployed outdoors.
推薦
Test and Measurement RF Switching
Bench and automated test equipment uses PIN diode switches for signal routing where electromechanical relays are too slow or too large. The BAP65-03,115 switches in nanoseconds under bias control, enabling fast channel hopping in RF test matrices, and its 0.35 ohm on-resistance keeps calibration-path insertion loss predictable. The 0.9 pF off-capacitance maintains channel-to-channel isolation across wide bandwidths. Engineers selecting this part for instruments should account for the EOL status with a lifetime-buy, since production availability cannot be guaranteed through multi-year instrument service life, and qualification of the BAP64-03 successor is advisable.
推薦
推薦產品摘要
工程參考資料，適用於 BAP65-03,115 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | BAP64-03,115 | BAP65-02,215 | BAR63-03WE6327 |
|---|---|---|---|---|
| Package | SOD-323 (SC-76), 2-pin | SOD-323 - same | SOD-323 - same | SOD-323 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Infineon |
主要差異化特點
- Very low off-state capacitance for high RF isolation (對比BAP64-03,115)
- Low 0.35 ohm forward resistance (對比BAP65-02,215)
- Honest trade-off: End-of-Life lifecycle (對比BAR63-03WE6327)
設計說明
Bias the BAP65-03,115 within its 100 mA maximum DC forward current and 500 mW dissipation limits. The RF resistance is set by bias current via the RS-vs-IF curve in the NXP BAP65-03 datasheet - increasing bias lowers insertion loss but raises control-power consumption. For continuous-duty transmit switching, verify average dissipation stays well under 500 mW; for pulsed duty, check peak current against the datasheet's pulse ratings. Estimated: at 50 mA bias with a typical PIN forward voltage near 1 V, dissipation is about 50 mW, leaving ample margin.
The 0.9 pF capacitance and very low series inductance of the BAP65-03,115 are only realized with a compact RF layout: keep the SOD-323 pads on a controlled-impedance 50-ohm microstrip with solid ground plane directly beneath, and minimize stub lengths to the bias tees. Use high-RF-impedance bias chokes or lambda/4 lines plus shunt bypass capacitors so RF does not leak into the DC control line. Place DC-blocking capacitors at the diode ports with self-resonance above the operating band.
Two pitfalls dominate. First, NXP marks BAP65-03 as End of Life and not recommended for new designs - starting a new design with it creates a supply risk; qualify BAP64-03 or a cross-brand SOD-323 PIN diode instead. Second, cross-brand equivalents cannot be assumed pin-identical from memory: the SOD-323 anode/cathode orientation, capacitance class, and VR must be checked on each candidate's datasheet, since a flipped cathode band in a shunt switch creates a hard RF short and can destroy the driver.
合規資訊
AEC-Q101 qualified per Arrow product listing (discrete semiconductor automotive standard; AEC-Q100 field not applicable to discretes). RoHS/REACH/lead-free status not stated in provided data - NXP ,115 ordering codes are typically RoHS-compliant but this must be confirmed on the NXP product page.
